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  • 1
    ISSN: 1432-0878
    Keywords: NADPH-diaphorase ; Vasopressin ; Oxytocin ; Coexistence ; Hypothalamus ; Rat (Wistar)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Coexistence of NADPH-diaphorase with vasopressin and oxytocin was studied in the magnocellular neurosecretory nuclei of the rat hypothalamus by use of sequential histochemical and immunocytochemical techniques in the same sections. Coexistence was found in all the nuclei examined (supraoptic, paraventricular, circular, fornical, and in some isolated neurons located in the hypothalamic area between the paraventricular and supraoptic nuclei). The ratios of neurons expressing both markers (NADPH-diaphorase and vasopressin, NADPH-diaphorase and oxytocin) in each of the nuclei were very similar. Although further studies must be carried out, the partial coexistence found in all nuclei suggests that NADPH-diaphorase is probably not related to general mechanisms involving vasopressin and oxytocin, but rather in specific functions shared by certain hypothalamic neuronal cell populations.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 99-103 
    ISSN: 1057-9257
    Keywords: Buffer layers ; Laser ablation ; Superconducting films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Ceramic thin films of yttria-stabilised zirconia (YSZ), SrTiO3(STO) and CeO2 have been deposited on Si(100) substrates by laser ablation. The films have been characterized by X-ray diffractometry, field emission scanning electron microscopy and secondary ion mass spectrometry (SIMS). The effects of the oxygen partial pressure during deposition and the substrate temperature were studied. All the films have preferential orientation: (h00) and (hh0) for STO and (hhh) for CeO2 and YSZ. The films show a low density of particulates and a very smooth surface. SIMS profiles indicate a low interdiffusion between film and silicon. One of the applications of these materials is their use as a buffer layer for the growth of YBCO on silicon. Because both materials are highly reactive, it is necessary to put a barrier between YBCO and silicon. For this purpose we used the ceramic films previously deposited in order to obtain superconducting YBCO films. The deposited YBCO films present good superconducting properties with zero resistance at temperatures between 80 and 85 K.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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