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  • 1990-1994  (4)
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Silver Grain Boundary Segregation in Copper (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 126-128 (Jan. 1993), p. 205-208 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.126-128.205.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Surface and in-depth chemical characterization of sputter-deposited Cr—Si—O layers by XPS and AES techniques (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 453-456 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: RF-sputtered Cr—Si—O cermet films deposited without and with a bias (200 V) have been studied by XPS and AES. Samples as deposited, etched by HF solution as well as annealed at temperatures up to 600°C have been considered. XPS results showed that the surface of the as-received samples were depleted in Cr and enriched in O with respect to the target composition. Silicon and Cr were present in both oxidized and reduced forms in the surface layer. Ar+ ion sputter profiles revealed that the composition of the subsurface approached that of the target and that Cr was present in the subsurface in reduced and Si in both oxidized and reduced states. AES in-depth profiling resulted in element concentration trends similar to but element ratios different from those observed by XPS. This was attributed to preferential sputtering coupled with the significantly different sampling depths of the two techniques. Cr3Si was identified by x-ray diffraction in samples treated at 600°C, but not even traces of it could be detected by this method below 400°C. The Si Auger parameter determined by XPS proved to be more sensitive in identifying silicide-type bonds in the Cr—Si—O layers studied.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740190185
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Estimation of the grain boundary coverage of segregated impurities from the kinetics of free surface segregation (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 615-617 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The bulk diffusion coefficient can be determined by measuring the kinetics of free surface segregation. In this paper it will be shown that if one chooses an appropriate temperature and time, the kinetics of free surface segregation mainly depend on the grain boundary diffusivity and the coverage of segregated impurity. In certain cases the grain boundary diffusion coefficient can be considered as known or at least constant and the relative grain boundary coverage can be determined. The average phosphorus coverage on the grain boundary of an Fe—P—C alloy will be studied in this way.
    Zusätzliches Material: 3 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.7401901114
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Improved depth resolution of AES in-depth profiling (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 77-79 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: In the case of conventional Auger in-depth profiling, the depth resolution increases with the thickness of the removed layer. It was demonstrated that by rotating the specimen, the depth resolution improves drastically in certain cases. Independently from this, A. Barna developed a phenomenological model to describe the change of surface topography developing due to ion sputtering. Based on his results, an Auger in-depth profiling device has been built. The capability of the device was checked by measuring in-depth profiles of Ni—Cr multilayer structure. The depth resolution determined from the measured profile is roughly constant along the depth.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740190117
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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