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  • 1990-1994  (4)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    The region 0.7615–0.796 m.u. of the HSV-1 genome determines suppression of humoral antibody formation against herpes simplex virus (1991)
    Springer
    Archives of virology 116 (1991), S. 175-184 
    Details
    ISSN: 1432-8798
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The influence of genetic properties of parts of the HSV-1 genome on suppression of humoral antibody formation was investigated by using intratypic recombinants. The deleted strain HFEM (HSV-1) induces suppression. The MluI DNA fragment (coordinates 0.7615–0.796 m.u.) derived from the antibody inducing strain F1 (HSV-1) was transfected into the deleted strain HFEM to produce the recombinant virus R-MlCI and shown to restore antibody formation, as demonstrated by neutralization- and ELISA-tests. The intratypic recombinant viruses R-15, R-19 and R-26, produced by transfection of the Bam HI DNA-fragment B (0.738–0.809 m.u.) of strain Fl into the deleted strain HFEM, resulted in antibody formation only in the recombinant virus R-26. The reason for these different properties might be associated with the presence of small deletions in the Sma I A-fragment (0.763–0.765 m.u.) or elsewhere in the Bam HI DNA-fragment B. Our results were finally correlated to replication of the recombinant viruses in macrophages and to spread into spleen and adrenal glands. There is evidence that antibody formation may be correlated to the ability of HSV to replicate in macrophages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01319240
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical conductivity, thermoelectric power and dielectric constant of a Gd2Ti2O7 single crystal (1991)
    Springer
    Journal of materials science 26 (1991), S. 6759-6763 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical conductivity, thermoelectric power and dielectric constant of a Gd2Ti2O7 single crystal have been studied in the temperature range 300–1000 K. Gd2Ti2O7 is found to be an-type semiconductor with energy band gap 1.5 eV. It exhibits an extrinsic nature up to 675 K and an intrinsic nature above 675 K. The thermoelectric power increases with temperature in the region 300–675 K whereas it decreases with temperature in the region 675–1000 K. The dielectric constant increases slowly in the temperature range 300–675 K but this increase becomes fast in the temperature range 675–1000 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02402671
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical conductivity, thermoelectric power and dielectric constant of a Gd2Ti2O7 single crystal (1991)
    Springer
    Journal of materials science 26 (1991), S. 6759-6763 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical conductivity, thermoelectric power and dielectric constant of a Gd2Ti2O7 single crystal have been studied in the temperature range 300–1000 K. Gd2Ti2O7 is found to be an-type semiconductor with energy band gap 1.5 eV. It exhibits an extrinsic nature up to 675 K and an intrinsic nature above 675 K. The thermoelectric power increases with temperature in the region 300–675 K whereas it decreases with temperature in the region 675–1000 K. The dielectric constant increases slowly in the temperature range 300–675 K but this increase becomes fast in the temperature range 675–1000 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00553703
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical transport properties of Eu2Ti2O7 single crystal (1992)
    Springer
    Journal of materials science 27 (1992), S. 4080-4084 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The electrical conductivity, thermoelectric power and dielectric constant of Eu2Ti2O7 single crystal have been studied in the temperature range 300–1000 K. Eu2Ti2O7 is found to be a n-type semiconductor with energy band gap of 2.5 eV. The compound exhibits an extrinsic nature upto 700 K and intrinsic nature above 700 K. Thermoelectric power decreases with temperature in the region 300–700 K whereas it increases with temperature in the region 700–1000 K. Dielectric constant increases with temperature in the entire temperature range studied with a discontinuity atT ∼ 700 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01105108
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    Paper (German National Licenses)
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