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Solid-phase epitaxial regrowth of Sb-implanted Si1−xGex strained layers: Kinetics and electrical properties (1994)

Atzmon, Z. ; Eizenberg, M. ; Shacham-Diamand, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 3936-3943

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of Sb-implanted strained Si1−xGex alloys are reported. Two sets of Si1−xGex epilayers with compositions of x=0.08 and 0.18, molecular beam epitaxy grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 200 and 100 keV, respectively, and doses of 1014 and 1015 ions/cm2. A set of Si(100) samples was also implanted as a reference. The samples were annealed at temperatures of 525, 550, and 575 °C for durations between 5 s and 10 min. For the higher-dose Sb-implanted Si0.92Ge0.08 layer (1015 cm−2) ion backscattering measurements in the channeling mode show a decrease in the regrowth rate compared to Sb-implanted Si(100). The activation energy of the SPEG process for the Si0.92Ge0.08 alloy was 2.9±0.2 eV, higher than the value of 2.4±0.2 eV obtained for pure Si. For the alloy with 18% Ge the SPEG rate for the 1015 cm−2 dose was much smaller compared to the sample with 8% Ge. For the lower-dose implantation (1014 cm−2) the regrowth rates for Si0.92Ge0.08 and pure Si were very close, and the activation energies were 2.8±0.2 and 2.7±0.2, respectively. It was also found that the SPEG rate in a rapid thermal annealing was significantly higher than that for a sample heated in a conventional furnace.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356013

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2

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Epitaxial regrowth of Sb implanted Si1−xGex alloy layers (1992)

Atzmon, Z. ; Eizenberg, M. ; Revesz, P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2243-2245

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Solid phase epitaxial regrowth of Sb implanted strained Si1−xGex alloy layers is reported. A set of Si0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575 °C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107043

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3

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Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates (1994)

Atzmon, Z. ; Bair, A. E. ; Jaquez, E. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 2559-2561

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thin heteroepitaxial films of Si1−x−yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 625 °C. The crystallinity, composition, and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry, secondary-ion-mass spectrometry, and cross-sectional transmission electron microscopy. The crystallinity of the films was very sensitive to the flow rate of C2H4 which served as the C source. Films with up to 2% C were epitaxial with good crystallinity and very few interfacial defects. Between 800 and 900 sccm of 10% C2H4 in He, the C content increased dramatically from 2% to 10% and the as-grown films changed from crystalline to amorphous. In order to establish deposition conditions for the crystalline-amorphous phase transformation, one SiGeC film was deposited as the 10% C2H4 flow was increased linearly from 500 to 1500 sccm during growth. When the C content reached ∼4%, the film developed considerable stacking defects and disorder, and at around 11% C, the film became amorphous. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112635

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Electrical properties of Sb implanted Si1−xGex alloy layers (1992)

Atzmon, Z. ; Eizenberg, M. ; Shacham-Diamand, Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 2902-2904

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electrical properties of Sb implanted strained Si1−xGex alloy layers are reported. Two sets of Si1−xGex epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm−2. Secondary-ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm−2), formed a p-type region upon annealing at 500 °C. Only higher temperature anneals transformed the implanted layer into the expected n-type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800–900 °C. For the high dose implantation (1015 cm−2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500–600 °C, while at the end-of-range region the activation efficiency was very low.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108043

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Low-dose implantation of Sb in Si1−xGex epitaxial layers: Correlation between electrical properties and radiation damage (1994)

Atzmon, Z. ; Eizenberg, M. ; Shacham-Diamand, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 377-381

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Pure Si(100) and Si1−xGex (x〈0.20) layers, epitaxially grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 100 keV and a dose of 1013 cm−2, which was found to be below the critical value for amorphization. Spreading resistance profiling and Hall-effect measurements show that a p-type region was formed in the Si1−xGex alloy layers upon annealing at 500 °C, in spite of the fact that the implanted ion (Sb) is a donor. Only higher-temperature anneals transformed the implanted layer into the expected n-type doping. A p-type region was also formed following Xe implantation, indicating that these results can be attributed to the radiation damage without dependence on the electronic structure of the ion. This phenomenon does not exist at all in pure Si. Rutherford backscattering (channeling) measurements show that the amount of defects formed in the Si1−xGex alloy layer during the implantation process increased with the Ge content, in good agreement with Monte Carlo simulations. These results can explain the observation that the level of the p-type doping increased with the Ge content in the alloys.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356991

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