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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4501-4509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of free standing 75-nm-thick thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 °C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400–700 °C were made in argon, oxygen, and nitrogen/hydrogen atmospheres. The results are interpreted in terms of a crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb2(Zr,Ti)2O6, rather than pyrochlore-type Pb2(Zr,Ti)2O6+X, where 0〈X〈1 or −1〈X〈0, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results may have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase may prove detrimental for these properties.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1521-1525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO2 electrodes. The RuO2/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO2 and PZT, as evidenced by the atomic resolution images as well as energy dispersive x-ray analysis. A nanocrystalline pyrochlore phase Pb2ZrTiO7−x, x≠1, was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO2/Si thin film was well crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO2/SiO2/Si thin films are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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