Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1850-1852
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The gate turn off capability of a trench insulated gate metal/amorphous silicon (a-Si:H)/crystalline silicon (c-Si) (p-n) heterojunction switching device is studied. Using a negative gate voltage to modulate the depletion width in the a-Si:H region, and hence lowering the field for the multiplication of carriers, the heterojunction switching device can be gate turned off or even gate locked. Thus the device can be developed as a gate controllable light switch or light sensor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106192
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