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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 985-987 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (490 °C)GaAs epitaxial growth on (100) silicon by molecular beam epitaxy is reported in this letter. Silicon wafers were cleaned by spin-etch technique to passivate silicon surface with hydrogen, by which the conventional high-temperature ((approximately-greater-than)850 °C) oxide desorption step for pre-epitaxial substrate preparation is eliminated. The possibility of epitaxial growth on such a passivated surface to obtain good quality epitaxy is investigated. Epitaxial films are characterized by cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, and double crystal diffraction (DCD).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108508
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Removal of cadmium ions in wastewater through biosorption (1991)
    Springer
    World journal of microbiology and biotechnology 7 (1991), S. 571-572 
    Details
    ISSN: 1573-0972
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Cadmium ions in wastewater can be removed by biosorption on to Acinetobacter calca var. antratus, isolated from a wastewater sample from a copper refinery. There are two equillibrium states: the first, which is reached quickly, is probably direct adsorption, and the second may be due to the release of ion adsorption materials by lysed cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00368363
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    Paper (German National Licenses)
    Fulltext
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