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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a new and versatile method to measure, on a nanometric scale directly, the magnetostrictive properties during the magnetization process to saturation, using a modified scanning tunneling microscope (STM). Both positive and negative magnetostrictive amorphous as-quenched wires have been studied. The studied samples are single pieces of amorphous wires typically 125 μm in diameter and 10–15 mm long. The magnetostriction data are then correlated with the longitudinal magnetization process, measured by a conventional induction technique and by SQUID magnetometry. The longitudinal magnetization process measurements have been performed in the same wires used in the STM studies. The field dependence of the magnetostriction helps to discern the operative magnetization process in the wires. In a 12-mm-long Co-based amorphous wire we observe a continuous rotation of the magnetization from zero field to saturation. The field dependence of the magnetization is a linear process reaching a value of about 5100 G at 8 Oe applied field. The magnetostrictive process for the same wire measured with a STM shows a continuous shrinking of the samples as a function of the applied field, reaching a value of −280 A(ring) for 8 Oe applied field. The obtained δl/l||sat, −2.3×10−6, agrees well with reported values of the saturation magnetostriction constant for this wire. In a 15-mm-long Fe-based amorphous wire we observe a more complicated field dependence of both the magnetization and the magnetostriction processes from zero-field to saturation.The longitudinal magnetization saturates at about 14000 G for 60 Oe applied field. The magnetostrictive process for the same wire measured with STM shows an elongation onset at about 1 Oe, pointing unambiguously to a 180° domain wall movement as the operative magnetization process below this field value. The field dependence of the magnetostriction saturates at about +5000 A(ring) for 60 Oe applied field. The obtained δl/l||sat, about +3.3×10−5, is again consistent with reported values of the saturation magnetostriction constant. Thus the STM approach to determine λ, on an A(ring) length scale, gives us a distinct great advantage in studying the magnetization process towards saturation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 2329-2337 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A two-dimensional Monte Carlo simulation algorithm is formulated following the tunneling mechanism for localized (pitting) corrosion. Depending on the values of a minimum set of control parameters, easily interpreted in terms of physicochemical variables, the two limiting regimes of stable and unstable corrosion are reproduced. Pits grown under such distinctive conditions are analyzed from the point of view of both their electrochemical response (current vs time behavior) and their morphology. In this last respect, fractal concepts are advantageously used to describe their exposed profiles as well as their distributions of local currents.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1164-1168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of tension and external field on the magnetization process in amorphous positive magnetostrictive Fe-Si-B wires. The radial stress created during the in-rotating water quenching technique of producing these wires causes a radial anisotropy. Using a simple phenomenological model which assumes a continuous distribution for the values of these radial stresses, we fit the observed values of the remanence as a function of the applied longitudinal stress and obtain information about the stress distribution. We also explain in a consistent manner the dependence of the magnetization process on the applied longitudinal stress. On doing so, a value of the saturation magnetostriction constant λs=28×10−6 is obtained for a Fe77.5Si7.5B15 amorphous wire. In the stress dependence of the nucleation field for the Barkhausen jump we observe a minimum. A quantitative explanation for this minimum is given.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5026-5028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the behavior found in tunneling measurements obtained by us on two high-Tc superconductors—a ceramic sample of Tl2Ca2Ba2Cu3O10+δ and a Bi4Ca3Sr3Cu4O16+δ single crystal—using a scanning tunneling microscope. We compare some of the experimental curves with simple model calculations, assuming different tunnel-barrier shapes (i.e., different barrier heights, degree of asymmetry, thickness, etc.), and also different quasiparticle density-of-states profiles and tunnel-junction configurations.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 382-384 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/n-GaAs and Al/Si/n-GaAs structures with thin silicon interfacial layers were grown in situ by molecular beam epitaxy and their electrical characteristics were measured. Effective barrier heights between 0.30 and 1.04 eV were determined through I-V and C-V measurements in the Al/Si/n-GaAs structures under varying conditions of deposition of the silicon layer, in contrast to a barrier height of 0.78 eV without the silicon layer. The conduction-band offset between Si and GaAs is estimated to be of the order of 0.3±0.05 eV. The results indicate that the Fermi level at the interface of GaAs on Si in the Al/Si/n-GaAs structure is unpinned from its midgap value.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2122-2124 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of hot minority carriers in p-GaAs is calculated for doping concentrations in the range of 1.5×1017 cm−3 to 1.5×1018 cm−3. It is shown that the electron-hole interaction increases the rate of dissipation of the excess energy of the minority carriers in the early stages of the process. However, this channel for energy dissipation becomes weaker as the cooling of the minority carriers proceeds, an effect more noticeable in the case of high doping levels. When the electron-hole interaction is disregarded, the dissipation rate is always smaller for low doping concentrations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2173-2184 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results of Al/n- and Al/p-type GaAs Schottky barrier structures grown in situ by molecular-beam epitaxy with thin Si epitaxial interfacial layers. The barrier heights are measured by the I-V, thermal activation, C-V, and photoresponse methods. Barrier heights in the range of 0.3〈φbN〈1.04 eV for n-type GaAs and 0.28 〈 φbP〈1.01 eV for p-type GaAs were obtained for Si layer thicknesses between 6 and 100 A(ring). Annealing studies conducted on the samples indicate that the structures are thermally stable to temperatures up to 450 °C. These results imply that the GaAs surface Fermi level at the Si/GaAs interface is unpinned from its customary near-midgap value. A model which involves the energy-band discontinuities ΔEC and ΔEV between GaAs and Si, the thickness, and the doping of the Si layer is suggested to account for the different barrier-height values obtained.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1191-1193 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel manifestation of piezoelectric effects in GaAs has been observed. The change of barrier height, φB, of Schottky diodes induced by uniaxial stresses, S, along 〈100〉, 〈011〉, 〈01¯1〉, and 〈111〉 has been measured. Shifts in φB due to the appearance of piezoelectric polarization charges at the semiconductor-metal interface for directions other than 〈100〉 are observed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2848-2853 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Although curvature collineations (curvature preserving transformations) have been studied within the context of general relativity for 20 years, there has been little attempt to study them systematically and there does not appear to have been a detailed mathematical investigation of their properties. This is the first of two papers that are intended as a contribution to this deficiency. This paper presents a discussion of the more general mathematical aspects of curvature collineations and suggests a program for studying them. The implementation of this program and the analysis of specific examples will be carried out in the second paper.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2854-2862 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: This paper is the second of a set of two papers on curvature collineations in general relativity. The first paper presented the mathematical basis of curvature collineations and a possible approach to their study. This paper continues from the first one by investigating in detail many of the cases where curvature collineations can occur in space-time. It is based on a classification of the curvature tensor which is discussed in the first paper and reviewed briefly here. This, together with the geometrical approach favored in this paper, leads to a rather general discussion of the problem which, it is hoped, does not obscure those physical aspects of the situation that are important in Einstein's theory.
    Type of Medium: Electronic Resource
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