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AES-depth-profiling of thin annealed Pt-films on Si(100) (1994)

Harder, C. ; Emsermann, A. ; Hammer, L. ; [et al.]

Springer

Czechoslovak journal of physics 44 (1994), S. 239-243

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ISSN: 1572-9486

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract Thin PtSi films can be grown by evaporating Pt on Si(100) at RT and subsequent annealing of the system at 600–700 K. Contaminants like oxygen are known to have a strong influence on this reaction. In the present study we concentrate on the effect of oxygen partial pressure during the annealing on the silicide growth process. Under proper vacuum conditions annealing at 500 K leads to a homogeneous Pt2Si film which reacts around 600 K completely to PtSi. A substantial oxygen partial pressure (≈ 0.1 mbar) in contrast results in an incomplete reaction in the same temperature range: unreacted platinum remains at the surface separated from the silicide by an oxygen enriched layer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01694487

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