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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Quality factor in a-Si:H nip and pin diodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5264-5268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the forward characteristics of a-Si:H nip and pin diodes. At low bias, a well-defined exponential region exists, described by a noninteger quality factor n between 1.2 and 1.7. With increasing temperature, the quality factor decreases. This behavior can be understood with a model based on electron and hole recombination in the i layer, which relates the temperature dependence of the quality factor to the distribution of localized states in the amorphous silicon. The predictions of the model are supported by numerical calculations in which the diode device equations are solved for a given distribution of localized states. The different ideality factors are due to different energy dependencies of the density of deep states in the i layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353755
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal bias annealing evidence for the defect pool in amorphous silicon thin-film transistors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film transistors were thermally annealed while a bias voltage was applied to the gate electrode. The transfer characteristics were then measured, and the density of states distributions derived by field-effect analysis. The results indicate that the equilibrium distribution and number of defects in the transistor channel region depend on the position of the Fermi energy during annealing. Thus the density of states can be increased or decreased in parts of the band gap. A high Fermi energy during annealing results in few states high in the gap and more states low in the gap. The reverse is true for annealing while the Fermi energy is low. This is consistent with the defect pool model for silicon dangling bond states and suggests that most deep states are part of the defect pool.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103452
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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