Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3315-3317
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electric conduction has been studied vs frequency ω and temperature T in InP layers grown at low temperature. The T and ω behaviors of the conductivity are found to be typical of a hopping process in a partially defect filled band, very similar to the one observed in disordered materials. We have determined the location of the Fermi level. The results are analyzed in terms of a recent theory developed by D. Emin [Phys. Rev. B 46, 9419 (1992)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109056
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