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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 6642-6647 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2774-2779 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optic Kerr effect and its wavelength dispersion have been measured in glasses representing several compositional systems. The measured Kerr effect was found to be large for glasses having large refractive indices, including: (i) glasses containing high concentrations of the heavy metals Pb, Bi, and Tl; (ii) glasses with high Nb, Ta, and Ti content; and (iii) tellurite glasses. Comparison of the third-order nonlinear susceptibility, χeff(ω = ω + 0 + 0), obtained from the measured electro-optic data, to values estimated from literature values of the optical frequency value, χeff(ω = ω + ω − ω) suggest an opposition of the electronic and nuclear contributions to the low-frequency electro-optic effect for the glasses containing Ti, Ta, or Nb.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments with coaxial plasma guns at currents in excess of ten megamperes have resulted in the production of high-voltage pulses (0.5 MV) and hard x radiation (10–200 keV). The x-radiation pulse occurs substantially after the high-voltage pulse suggesting that high-energy electrons are generated by dynamic processes in a very high speed ((approximately-greater-than)106 m/s), magnetized plasma flow. Such flows, which result from acceleration of relatively low-density plasma (10−4 vs 1.0 kg/m3) by magnetic fields of 20–30 T, support high voltages by the back electromotive force-u×B during the opening switch phase of the plasma flow switch. A simple model of classical ion slowing down and subsequent heating of background electrons can explain spectral evidence of 30-keV electron temperatures in fully stripped aluminum plasma formed from plasma flows of 1–2 × 106 m/s. Similar modeling and spectral evidence indicates tungsten ion kinetic energies of 4.5 MeV and 46 keV electron temperatures of a highly stripped tungsten plasma.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6844-6849 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the continuous (cw) 77–200 K operational characteristics of cw 300-K AlxGa1−xAs-GaAs quantum-well heterostructure diode lasers grown on Si substrates. Operation is demonstrated for over 500 h with a junction temperature as high as ∼200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that longer cw 300-K lifetimes than previously demonstrated (17 h) may be possible. The effects of the optical power level on the degradation rate are examined, and it is shown that the maximum cw 300-K power output for these devices (∼30 mW/facet) is limited by catastrophic facet degradation. The effects of naturally occurring microcracks on device stability are also considered, and the effect of stress on the output polarization is measured and discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1435-1444 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the near-threshold behavior of a circularly symmetric distributed feedback laser by developing a coupled-mode theory analysis for all azimuthal modes. We show that the equations that describe the low-order azimuthal modes are, to a very good approximation, the same as those for the one-dimensional (linear) distributed feedback laser. We examine the behavior of higher-order azimuthal modes by numerically solving the exact coupled-mode equations. We find that while a significant amount of mode discrimination exists among radial (longitudinal) modes, as in the one-dimensional distributed feedback laser, there is a much smaller degree of discrimination among azimuthal modes, indicating probability of multimode operation. Despite the multimode behavior, we find that the frequency bandwidth associated with modes that do lase ought to be smaller than the spacing between Fabry-Perot modes of a typical semiconductor laser. This laser is an excellent candidate for a surface-emitting laser—it should have a superb quality output beam and is well-suited for array operation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3328-3329 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A well-established method for the accurate measurement of small changes in ac magnetic susceptibility is to initially null and then monitor the output of the susceptometer as various parameters are modified. Use of a computer-controlled phase shift filter has allowed us to build a system that will introduce virtually orthogonal signals to compensate for the in-phase and out-of-phase components of the output. The system described is designed for use over the frequency range 50 Hz–4 kHz. Extended frequency ranges are possible with only slight modifications.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of metamorphic geology 9 (1991), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Abstract Standard petrographic, microthermometric and Raman spectroscopic analyses of fluid inclusions from the metamorphosed massive sulphide deposits at Ducktown, Tennessee, indicate that fluids with a wide range of compositions in the C–O–H–N–S–salt system were involved in the syn- to post-metamorphic history of these deposits. Primary fluid inclusions from peak metamorphic clinopyroxene contain low-salinity, H2O–CH4 fluids and calcite, quartz and pyrrhotite daughter crystals. Many of these inclusions exhibit morphologies resembling those produced in laboratory experiments in which confining pressures significantly exceed the internal pressures of the inclusions. Secondary inclusions in metamorphic quartz from veins, pods, and host matrix record a complex uplift history involving a variety of fluids in the C–O–H–N–salt system. Early fluids were generated by local devolatilization reactions while later fluids were derived externally.Isochores calculated for secondary inclusions in addition to the chronology of trapping and morphological features of primary and secondary fluid inclusions suggest an uplift path which was concave toward the temperature axis over the P–T range 6–3 kbar and 550–225° C. Immiscible H2O–CH4–N2–NaCl fluids were trapped under lithostatic to hydrostatic pressure conditions at 3–0.5 kbar and 215 ± 20° C. Entrapment occurred during Alleghanian thrusting, and the fluids may have been derived by tectonically driven expulsion of pore fluids and thermal maturation of organic material in lower-plate sedimentary rocks which are thought to underlie the deposits. Episodic fracturing and concomitant pressure decreases in upper-plate rocks, which host the ore bodies, would have allowed these fluids to move upward and become immiscible. Post-Alleghanian uplift appears to have been temperature-convex.Uplift rates of 0.10–0.05 mm year−1 from middle Ordovician to middle Silurian – late Devonian, and 0.07–0.12 mm year−1 from middle Silurian – late Devonian to late Permian are suggested by our uplift path and available geochronological data.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 101 (1994), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 834-836 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1−xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1−xAs(x(approximately-greater-than)0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO2 or Si3N4). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1−xAs with H2O vapor in N2 carrier gas (400 °C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power operation of hydrogenated AlyGa1−yAs-GaAs-InxGa1−xAs ten-stripe arrays operating at λ∼1.06 μm is described. Continuous (cw) operation of arrays with uncoated facets that are stabilized in temperature at 10 °C has produced output powers as high as 375 mW/facet at 1.4 A. The optical coupling of the gain-guided arrays is shown to be significantly different from otherwise similar arrays fabricated in the AlyGa1−yAs-GaAs system. Limited "lifetesting'' (168 h) of these strained layer diodes, stabilized at 50 °C and a cw output power of 100 mW/facet (200 mW total), indicates good operating stability.
    Type of Medium: Electronic Resource
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