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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Stability of C49 and C54 phases of TiSi2 under ion bombardment (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2660-2666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of C49 phase TiSi2 to the low resistivity C54 phase is necessary for many microelectronic applications. Here, we report on attempts to decrease this transformation temperature by low-energy ion bombardment at elevated temperature. Ion irradiation was performed using a broad beam Kaufman ion source operated in N2 or Ar gas between 0.1 and 2 keV beam energy, with ion doses ranging from 2.0×1016 to 1.9×1018 ions/cm2, and sample temperatures from 480 °C to 735 °C. For comparison, room-temperature Ar+ implantation at higher energy (105–210 keV) was performed with a dose of 1016 ions/cm2 with projected ranges within and beyond the TiSi2 layer thickness. Resistivity measurements as a function of temperature, x-ray diffraction, and Rutherford backscattering spectrometry were used to determine the composition and phases. Results show that low-energy ion bombardment does not promote the C49-C54 transformation at the temperatures studied, while ion implantation actually raises the temperature for the transformation. In addition, bombardment of C54 TiSi2 does not cause it to revert to the C49 phase, indicating that both phases appear to be surprisingly stable under ion bombardment. Simulations of defect production using the trim code indicate the formation of a higher number of displaced atoms than are usually required to initiate a transformation. We conclude that the defects introduced into C49 TiSi2 by ion bombardment at energies up to 2 keV are either not sufficient to nucleate the C54 phase or they are annealed out too quickly at the temperature needed for C54 phase growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349380
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2031-2033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low-energy ion beam of 18O+2 to form oxides and 14N+2 to form nitrides. The ion energies investigated ranged from 100 eV to 1 keV. Thin films of SiGe oxide and SiGe nitride were formed at all energies used as evidenced by in situ x-ray photoelectron spectroscopy analysis. They were found to be insulating by ex situ scanning electron microscopy observations. During the ion beam processing, the Ge content of the alloy layer decreases, due to preferential sputtering of Ge and the Ge compounds. However, as the ion energy is decreased, the concentration of Ge in the alloy remains closer to the original content. The thermal stability of these new SiGe dielectrics was also assessed up to 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106122
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    SIMS, EDX, EELS, AES, XPS study of interphases in nicalon fibre-LAS glass matrix composites (1994)
    Springer
    Journal of materials science 29 (1994), S. 4535-4544 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Auger electron (AES), electron energy loss (EELS) and X-ray photoelectron spectroscopy (XPS) were used to identify the reaction products at the fibre-matrix interface in SiC nicalon fibre-LAS (Li2O, Al2O3, SiO2) or LAS + Nb2O5 glass matrix composites. Chemical bonding of the different elements was investigated by AES using sputter-depth profiling on fibres extracted from two matrices by etching in hydrofluoric acid. The chemistry of the silicium was studied by EELS in nicalon-LAS + Nb2O5 composite cross-sections. XPS was performed on fibres extracted from the nicalon-LAS + Nb2O5 composite to confirm EELS and AES results. These investigations show that in both composites the reaction scale at the fibre-matrix interface consists of a carbon layer next to the matrix and of a silicate phase rich in oxygen which contains carbon, probably in the form of a silicon oxycarbide, and which is located between the carbon layer and the fibre core.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00376276
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    Paper (German National Licenses)
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