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  • 1990-1994  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Plane grating monochromator beamline for VUV radiometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3229-3232 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new beamline for radiometric applications (e.g., detector calibration and reflectometry) has been installed and characterized at the laboratory of the Physikalisch-Technische Bundesanstalt at the electron storage ring BESSY. The beamline is equipped with a SX700 type plane grating monochromator and a toroidal mirror behind the exit slit of the monochromator for collimating the radiation to allow angle resolved reflectometry. A divergence of 0.1 mrad has been achieved. The beamline has been optimized for high spectral purity of the radiation. Within the photon energy range from 40 to about 1500 eV the total amount of stray light and higher order radiation stays below 1%. A photon flux of up to 1011 s−1 has been measured in the focal point of the toroidal mirror. It corresponds to a radiant power of a few μW and thus allows use of a cryogenic radiometer for detector calibration. The details of the beamline layout and the results of the performance characterization are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144555
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Structure and performance of Si/Mo multilayer mirrors for the extreme ultraviolet (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2144-2156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of structural, chemical, and extreme ultraviolet (EUV) characterization of Si/Mo multilayers grown by sputtering and by UHV evaporation. This study includes mirrors designed for normal incidence with peak reflectivities Rpeak between 22 and 24 nm, and 45° mirrors having Rpeak between 16 and 19 nm. The deposition conditions were varied to produce multilayers with a wide range of interface morphologies. A variety of techniques were used to determine the structure and composition of the multilayers, including x-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, and Auger depth profiling. All of the mirrors have amorphous Si layers and polycrystalline Mo layers with thin amorphous alloy interlayers. We obtain good fits to the low-angle x-ray diffraction data only when these interlayers are taken into account. The best sputter-deposited mirrors were made at the lowest Ar pressure studied, 3 mTorr. The best evaporated mirrors were produced at a substrate temperature of 200 °C. The EUV reflectivity as a function of wavelength was measured using synchrotron radiation. Both the multilayer structure and surface contamination significantly affect the EUV reflectivity, and must be considered to obtain good fits to the reflectivity curves. The best 45° mirror had a peak reflectivity of 53% at 18.6 nm for 100% S-polarized light, and the best normal-incidence mirror had a peak reflectivity of 33% at 23.6 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357626
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-calibration of semiconductor photodiodes in the soft x-ray region : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 797-801 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A self-calibration procedure is presented for semiconductor photodiodes to be used as detectors in the soft x-ray region. In this procedure the spectral responsivity is calculated according to a model from experimentally accessible parameters of the detector. The thicknesses of the dead layer and the space charge region as well as the diffusion length have been determined in monochromatic radiation by investigating the angular dependence of the photocurrent. The mean energy for electron-hole pair creation has been determined in calculable undispersed synchrotron radiation of the primary standard source BESSY. The obtained uncertainties of the spectral responsivity in the photon energy region between 150 and 2500 eV are ≤4.2% for newly developed Si n on p diodes and ≤6% for GaAsP/Au diodes. The calibrated photodiodes were used to determine the quantum efficiency of photoemissive gold diodes which is up to four orders of magnitude lower than that of semiconductor photodiodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143800
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Mo0.5Si0.5/Si multilayer soft x-ray mirrors, high thermal stability, and normal incidence reflectivity (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2207-2209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer soft x-ray mirrors with an absorber consisting of the mixture Mo0.5Si0.5 have been fabricated by electron-beam evaporation in UHV. This has been done to get soft x-ray normal incidence mirrors for 80–100 eV photon energy with enhanced thermal stability and still high reflectivity. The thermal stability is studied by baking them at temperatures between 600 and 950 °C. The results were compared with multilayers of pure Mo and Si, which were also fabricated by electron-beam evaporation. After each baking step the x-ray mirrors are characterized by small angle CuKα x-ray diffraction. The reflectivity of the first-order Bragg peak is nearly constant up to 20 min baking at 900 °C. Further we present the normal incidence soft x-ray reflectivity for wavelengths between 12 and 18 nm of a Mo0.5Si0.5/Si mirror with 12 double layers (N=12) and of a Mo0.5Si0.5/Si mirror as deposited with 33 double layers (N=33). With the latter a reflectivity of 46% is achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110529
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Calibration of a Si(Li) detector system with different radiation entrance windows (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 741-743 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The spectral quantum detection efficiency of a Si(Li) detector was determined using the electron storage ring BESSY as a standard source of calculable spectral photon flux. The calibrations were performed for the same detector system with a Be window, an ultrathin silicon-based window and without window for photon energies above 300 eV. For comparison the transmission of the windows was measured in monochromatic radiation from 350–2000 eV with high spectral resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142077
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation (1994)
    Springer
    Applied physics 58 (1994), S. 371-376 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30° C, 150° C, 200° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (T bak) between 200° C and 800° C in steps of 50° C or 100° C. After each baking step the multilayers are characterized by small angle CuKα-X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200° C stands even a 20 min 500° C baking without considerable changes in the reflectivity behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323612
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    Paper (German National Licenses)
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