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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    The dielectric constant measurement of CdIn2Te4 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4472-4475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic properties of various single crystals of CdIn2Te4 have been investigated, and more particularly the static dielectric constant εr. This material is usually known to have a very large dielectric constant, values as large as 200–265 are frequently claimed. Two methods were used to study εr. One is based on the direct measurement of the capacitance of a In/CdIn2Te4/In structure and a second one uses a Schottky diode. In this latter case, the εr value is deduced with the help of the Hall measurements. From our measurements the dielectric constant would be much smaller than 200–265, it is estimated to about 11. Finally our results are compared with those obtained by optical measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349079
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of the mobility and transport properties of photocarriers in Bi12GeO20 by the time-of-flight technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2180-2191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct measurement of a key material parameter in photorefractivity, the charge carrier mobility, has been achieved only recently by means of a holographic time-of-flight technique. In this paper we report, as far as we know, the first successful direct determination of electron mobility using the classical time-of-flight method. This consists in measuring the velocity of a sheet of excess carriers, created by a short-duration excitation pulse of strongly absorbed photons close to the surface. These carriers drift through the sample under the action of an applied electric field. However, the technique could not be used in its original configuration. A constant background illumination was required in order to saturate traps and to prevent space charge build up. Optimal illumination conditions (wavelength below 550 nm, suitable integrated number of photons) were found under which a quasifree, nondispersive, charge transport was observed. The mobility is limited by interaction with a shallow trap, the population of which can be modulated by the additional monochromatic illumination. An unexpected high value was found as compared to results published earlier. This value is probably very close to the microscopic collision-limited mobility. This explains the relatively small spread of the results obtained with different nominally undoped Bi12GeO20 (BGO) samples. The values lie in the range 0.2–1.0 cm2 V−1 s−1. They are in excellent agreement with that measured elsewhere in BSO using the holographic time-of-flight technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354752
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Low and high electric field transport in CdIn2Te4 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1813-1818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low and high electric field transport in the CdIn2Te4 electro-optical semiconductor were investigated. The conductivity, the carrier concentration, and the mobility were measured versus the temperature using Hall techniques. Nonlinear current-voltage characteristics in high fields are interpreted in terms of thermal effects, not in terms of space-charge-limited currents as usually encountered. The nonreversibility of I-V measurements is also discussed, diffusion of species are proposed to explain the change of activation energy of the conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353191
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Defects in photorefractive CdTe:V: An electron paramagnetic resonance study (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1140-1142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vanadium-doped CdTe has recently been shown to have a high sensitivity for optical processing at 1.5 μm but the role of the vanadium dopant has been questioned. We present the results of an electron paramagnetic resonance study of this material, which demonstrates that vanadium is the dominant paramagnetic defect, which pins the Fermi level and gives rise to photoconductivity at 1.5 μm. The vanadium is substitutionally incorporated on a Cd site at concentrations of ≈5×1016 cm−3 and acts as a deep donor with a 2+/3+ level at Ev+0.8 eV. The defect is only observed in the 3+ charge state. The spin Hamiltonian parameters of the V3+ defect are determined as follows: electron spin S=1, Landé g-factor g=1.962±0.001, central hyperfine interaction constant A=60×10−4 cm−1, Cd Ligand hyperfine interaction constant T=4×10−4 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109805
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium telluride (1992)
    Springer
    Applied physics 55 (1992), S. 33-40 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.70 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present new results on the growth of semi-insulating vanadium-doped cadmium telluride crystals and their characterization by different optical techniques such as photoinduced current transient spectroscopy, absorption, photoconductivity spectra, and photorefractive wave mixing. Our joint research program aims at developing optimized crystals for efficient optical processing in the near infrared through the photorefractive effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324599
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    Paper (German National Licenses)
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