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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of Si1−xGex/Si superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3474-3479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting computer-simulated double-crystal x-ray-diffraction rocking curves to the experimental data, it is determined that there exist graded variations in both the component thickness ratio t1/t2 (t1 and t2 are the thickness of the Si1−xGex and the Si layers, respectively) and the fraction x in one sample. The x-ray grazing incidence diffraction experiments reveal a lattice strain relaxation of about 27% in another sample. The lattice relaxation and the influence of variations of x and t1/t2 on the rocking curves are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351423
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of surface roughness of InP (001) wafers by x-ray scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357366
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Dielectric surface preflashover processes in vacuum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3313-3320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface preflashover phenomena across alumina ceramics in vacuum are presented. The localized plasmas are identified by the spatially resolved images that appear in a pulse surface preflashover phase using an intensified charge-coupled-device camera, along with coordinated, time-resolved preflashover current and luminosity. It was observed that significant preflashover activity associated with the localized plasmas on the surface appears after a flashover event and disappears after a few pulse voltage applications. Large bursts of current pulses (several hundred milliamperes) with no counterpart in the luminosity signal were also observed during preflashover. These phenomena cannot be explained satisfactorily by electron stimulated gas desorption. The effect of adsorbed gases and surface polishing on preflashover are presented and discussed. The experimental results indicate that preflashover essentially depends on the surface state (physical and chemical) of the solid insulator. The preflashover conduction associated with the localized plasmas is attributed to the detrapping and impact-ionization processes associated with defect centers. The results reported support the surface flashover model based on trapping/detrapping and impact ionization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357453
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Surface scattering of x rays from InP (001) wafers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3317-3319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface scattering of x rays from mechanical-chemical polished InP (001) wafers with sulfur and/or iron doping. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model was proposed to explain the experimental data. The results were also compared with those obtained from crystal truncation rod measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112446
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of graded layer on the X-ray double-crystal diffraction rocking curve (1992)
    Springer
    Journal of materials science 27 (1992), S. 6765-6769 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The composition gradient in an InAlAs epitaxial layer on InP (0 0 1) substrate has been investigated using an X-ray double-crystal diffraction technique and a computer simulation method. Good agreement has been obtained between theoretical and experimental rocking curves when the correct graded layers are assumed in the samples. The results show that the graded layer introduces very sensitive asymmetric changes in layer peak and interference fringes. The intensities of the interference increase more strongly on the higher or lower angle side, while they are reduced on the other side, and the layer peak shifts to the higher or lower angle direction according to the positive or negative gradient. In all cases, however, the angle separations of the interference fringes do not change if the total thickness of the epilayer is unchanged.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01165966
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    Paper (German National Licenses)
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