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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1276-1280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 1018 oxygen atoms cm−3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350336
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Mapping of the structural perfection of vapor grown α-HgI2 crystals by means of γ-ray rocking curves (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3371-3376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mapping of perfection of as-grown mercuric iodide crystals has been performed in order to assess the distribution of structural defects produced during growth and cooling. Nearly perfect areas have been found between the {001} crystal facets with the full width at half maximum values of the rocking curves approaching the resolution limit of the γ-ray spectrometer (±0.015 deg arc). On the other hand, deterioration of the structure in regions close to the crystal bottom as well as bending of the crystal lattice have been revealed. Possible reasons for these defects are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356096
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A neutron backscattering study of lattice deformations in silicon due to SiO2 precipitation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 533-539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski-grown dislocation free silicon crystals containing approximately 7.5, 9.9, and 18×1017 cm−3 oxygen atoms have been annealed at 750, 1050, and 1200 °C for times varying between 20 and 216 h. Neutron transmission spectra measured at reflection 111 in backscattering geometry reveal mean lattice contractions of the order of 5×10−5 and lattice parameter fluctuations up to Δd/d≈5×10−4. The measuring time for one spectrum is 15 min and an on-line characterization of the defects produced during annealing is feasible. A combination of this technique with neutron small angle scattering, γ-ray diffractometry, and diffraction experiments with high-energy synchrotron radiation opens new possibilities for investigations of oxygen precipitation in silicon crystals as used in very-large-scale integration semiconductor device technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345239
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Neutron backscattering on vibrating silicon crystals-experimental results on the neutron backscattering spectrometer IN10 (1993)
    Springer
    The European physical journal 90 (1993), S. 143-153 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Neutron backscattering on vibrating silicon crystals has been measured in transmission geometry on the backscattering spectrometer IN10 at the Institute Laue-Langevin (ILL). The crystals were excited into longitudinal mechanical resonance vibrations by LiNbO3 transducers glued to the crystal surface. The transmitted intensity of the 111 Bragg reflection was measured as a function of the deformation amplitude at vibration frequencies from 2.5 MHz to 30 MHz. By vibrating the initially perfect silicon crystal, an increase in ΔE/E of the diffracted profile was achieved, accompanied by an increase of the backreflected intensity. The width of the reflection and the resolution is a linear function of the ultrasonic strain over a wide range of excitation strengths. ΔE/E can be easily tuned in a reproducible way by varying the voltage on the piezoelectric transducer. For the highest excited ultrasonic strain an increase of the backscattered intensity of about a factor of 50 is observed. Sound wave amplitudes can be determined from the measured width in ΔE/E of the transmission curves. The obtained results are relevant for the design and operation of intensity-to-resolution tunable monochromators for high resolution instruments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02198147
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    Paper (German National Licenses)
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