ZIB

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Low-resistivity transparent In2O3 films prepared by reactive ion plating (1994)

Jeong, J. I. ; Moon, J. H. ; Hong, J. H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 1215-1217

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A(ring)/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x-ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110893

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit