ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Stoichiometric thin films of LiNbO3 have been deposited on (100) silicon by a pulsed excimer laser deposition technique. By studying several cases of depositions in vacuum, oxygen, and argon, as well as oxygen-argon mixture as ambients, it is brought out that the desired stoichiometry in the film can be attained only by having an appropriate oxygen-argon mixture during deposition. The films have been characterized by x-ray diffraction, infrared transmission, and spectroscopic ellipsometry techniques.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350509
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