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  • 1990-1994  (14)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Evidence for spatially indirect recombination in Ga0.52In0.48P (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2780-2787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In previous work we have identified a near-gap photoluminescence in Ga0.52In0.48P which exhibits a strong dependence of emission energy on excitation intensity ("moving emission'') and correlated its presence and strength to conditions of growth. In this work we extend our investigations to the rise and decay lifetimes associated with the moving and nonmoving components of the emission. The two processes proceed simultaneously at the same energy. For the moving emission, the time constants scale approximately linearly with excitation intensity. Decaying luminescence can, in most cases, be well fitted with one or two exponentials with time constants as long as milliseconds. The rising luminescence is typically slower and in some cases has a nonmonotonic first time derivative. These results are discussed in terms of existing models of the microstructure of ordered Ga0.52In0.48P.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349364
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameter (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1890-1895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical efficiencies are calculated for two-junction, series-connected solar cells using air mass 1.5 global and direct irradiance spectra. For band-gap combinations previously limited by a low bottom-cell current, thinning of the top cell is shown to result in significant increases in the theoretical efficiencies. The increases are primarily due to increased short-circuit currents, since current matching is achievable. Smaller gains are also seen in the open-circuit voltages of the thinner cells when a low surface-recombination velocity is assumed. Thus, a number of material combinations which previously could only be used in four-terminal configurations can now be considered for series-connected two-junction solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347177
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5163-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353792
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  • 4
    Electronic Resource
    Electronic Resource
    Low-band-gap Ga0.5In0.5P grown on (511)B GaAs substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5110-5113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355756
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  • 5
    Electronic Resource
    Electronic Resource
    Excitation intensity dependence of photoluminescence in Ga0.52In0.48P (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 620-622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103615
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  • 6
    Electronic Resource
    Electronic Resource
    A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 623-625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700 °C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102717
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of growth rate on the band gap of Ga0.5In0.5P (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1922-1924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap of Ga0.5In0.5P is reported as a function of growth rate and growth temperature. The Ga0.5In0.5P is grown lattice matched to 2°-off (100) GaAs substrates by atmospheric pressure organometallic chemical vapor deposition using an inlet group V/III ratio of 65. The variation of the band gap is surprisingly complex, taking five different functional forms within the two-dimensional parameter space. These include regions in which the band gap (1) increases with growth rate, (2) decreases with growth rate, (3) is independent of both growth rate and temperature, (4) is independent of growth rate, but dependent on growth temperature, and (5) is not measurable since three-dimensional, instead of two-dimensional, growth is observed. The behavior can only be explained by a theory involving competing processes. One such theory is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104013
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  • 8
    Electronic Resource
    Electronic Resource
    Band-gap narrowing in ordered Ga0.47In0.53As (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1806-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of band-gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109640
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  • 9
    Electronic Resource
    Electronic Resource
    29.5%-efficient GaInP/GaAs tandem solar cells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 989-991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112171
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of faceting on the band gap of ordered GaInP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 878-880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112188
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