ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have found that ultrasound treatment (UST) has a profound effect on the recombination rate in as-grown, B-doped cast polycrystalline silicon wafers for photovoltaic applications. As determined by surface photovoltage measurements of the minority carrier diffusion length L, the UST increases the corresponding lifetime by almost an order of magnitude. The maximum enhancement takes place in the wafer regions with the shortest L values. For L(approximately-greater-than)20 μm, both positive and negative changes of L after UST are revealed at different wafer regions. The UST effect is temperature dependent and exhibits maximum influence at about 60 °C. Enhanced dissociation of Fe-B pairs by UST is identified as a mechanism which leads to a negative change of large L values, and a complex post-treatment relaxation. A positive change of L is attributed to the influence of ultrasound vibrations on crystallographic defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112942
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