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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5437-5442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial growth of single crystalline 6H-SiC layers is performed by chemical vapor deposition (CVD). 6H-SiC substrates are grown by a sublimation technique. They have vicinal surfaces inclined 1.5° to 2° from the (0001) plane towards the [11¯00] direction. We report CVD growth at 1600 °C in the hydrogen-silane-propane gas system with nitrogen as a dopant. High quality films are achieved with growth rates of about 1.8 μm per hour. The layers are examined by optical microscopy, infrared reflection, photoluminescence, and Rutherford backscattering. For electrical characterization capacitance-voltage and Hall measurements are performed. Unintentionally doped layers have donor concentrations in the upper 1015 cm−3 range. Electron mobilities of 370 cm2/V s at room temperature and about 104 cm2/V s at 45 K are observed. To the authors' knowledge this is the highest mobility so far reported for 6H silicon carbide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351985
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3120-3122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect measurements in a Hall-bar configuration are performed on nitrogen-doped n-type bulk 4H, 6H, and 15R SiC single crystals cut into small parallelepipeds with their longest edges either parallel or perpendicular to the cˆ axis. In the temperature range investigated (40–700 K), an anisotropy of the electron Hall mobility is observed in all three polytypes. While the mobility perpendicular to the cˆ axis—with magnetic field perpendicular or parallel to the cˆ axis—is greater than the mobility parallel to the cˆ axis for 6H and 15R SiC, 4H SiC shows the opposite behavior. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112455
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  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear optical ferroelectric liquid crystals and device configurations (1994)
    Springer
    Applied physics 59 (1994), S. 607-615 
    Details
    ISSN: 1432-0649
    Keywords: 61.30 ; 42.80 ; 42.65 ; 42.82
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Ferroelectric Liquid Crystals (FLCs) are presented which comprise charge-transfer functional groups, such that highly efficient NonLinear Optical (NLO) properties and pronounced ferroelectricity result. By operating the NLO-FLCs in one of the two Bistable states of the Short-pitch Ferroelectric (SPF) conformation, stable, planar waveguides result. The NLO-FLCs exhibit exceptionally large second-order NLO-coefficientsd 22 = 5 pm/V. Moreover, their linear electrooptical effect is shown to be essentially electronic in nature. This renders ultrafast electrooptical modulators with NLO-FLCs feasible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01081181
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    Paper (German National Licenses)
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