Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (4)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Control of ordering in Ga0.5In0.5P using growth temperature (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3520-3525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetic processes leading to ordering in Ga0.52In0.48P have been studied by observing the effects of substrate misorientation (0°–9°), growth rate (0.1–0.5 μm/h), and substrate temperature (570–670 °C) during growth. The ordered structure and degree of ordering are determined using transmission electron microscopy and photoluminescence (PL) spectroscopy. Low growth rates were used for samples with misorientations of 0°–9° toward the [1¯10] lattice direction to elucidate the ordering mechanism; however, due to the long times required to grow layers thick enough for PL characterization (≈1 μm), at a temperature of 670 °C the samples became less ordered with increasing misorientation angle. This was attributed to a disordering annealing process occurring during growth which leads to disorder. In order to reduce the rate of this annealing process, the growth temperature was reduced from 670 to 570 °C. At this temperature, a growth rate of 0.5 μm/h produces material with an increasing degree of order as the angle of substrate misorientation is increased from 0° to 9°. This shows that the kinetics of the ordering process are assisted by an increasing density of [110] steps on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357433
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effects of substrate misorientation and growth rate on ordering in GaInP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5135-5141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaxIn1−xP with x≈0.52 have been grown by organometallic vapor-phase epitaxy on GaAs substrates misoriented from the (001) plane in the [1¯10] direction by angles cursive-thetam, of 0°, 3°, 6°, and 9°. For each substrate orientation growth rates rg of 1, 2, and 4 μm/h have been used. The ordering was characterized using transmission electron diffraction (TED), dark-field imaging, and photoluminescence. The (110) cross-sectional images show domains of the Cu-Pt structure separated by antiphase boundaries (APBs). The domain size and shape and the degree of order are found to be strongly affected by both the substrate misorientation and the growth rate. For example, lateral domain dimensions range from 50 A(ring) for layers grown with rg=4 μm/h and cursive-thetam=0° to 2500 A(ring) for rg=1 μm/h and cursive-thetam=9°. The APBs generally propagate from the substrate/epilayer interface to the top surface at an angle to the (001) plane that increases dramatically as the angle of misorientation increases. The angle is nearly independent of growth rate. From the superspot intensities in the TED patterns, the degree of order appears to be a maximum for cursive-thetam≈5°. Judging from the reduction in photoluminescence peak energy caused by ordering, the maximum degree of order appears to occur at cursive-thetam≈4°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355759
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Kinetically controlled order/disorder structure in GaInP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Ga0.52In0.48P order/disorder heterostructure having a band-gap energy difference exceeding 160 meV has been grown by organometallic vapor phase epitaxy. The two layers were grown on a nominally (001)-oriented GaAs substrate misoriented by 3° toward the [1¯10] direction in the lattice. The disordered layer was grown first, at a temperature of 740 °C. The temperature was then reduced to 620 °C for the growth of the second, highly ordered, layer. X-ray diffraction shows that the two layers have the same composition and are both lattice matched to the GaAs substrate. Transmission electron diffraction patterns indicate that the first layer is completely disordered and that the second layer is highly ordered with only one variant. A low density of antiphase boundaries is observed in the dark field transmission electron microscope image of the top (ordered) layer. High resolution images demonstrate that the interface is abrupt with no dislocations or other defects. Photoluminescence measured at 10 K shows two sharp and distinct peaks at 1.998 and 1.835 eV for high excitation intensities. The peak separation is even larger at lower excitation intensities. The two peaks come from the disordered and ordered materials, respectively. The peak separation represents the largest energy difference between ordered and disordered material reported to date. This large energy difference, much larger than kT at room temperature, may make such heterostructures useful for photonic devices such as light emitting diodes and lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112219
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Control and characterization of ordering in GaInP (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3496-3498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.51In0.49P layers have been grown by organometallic vapor phase epitaxy on GaAs substrates with [110]-oriented grooves on the surface that have an important effect on the formation of Cu-Pt ordered structures during growth. In this work, the groove shape is demonstrated to be critically important. For the optimum groove shape, single domains of the (1¯11) and (11¯1) variants of the Cu-Pt ordered structure are formed on the two sides of the groove. Shallow grooves produce large domains on each side of the groove containing small domains of the other variant. For deep grooves, only a single variant is formed on each side of the groove, but the domains are small. For substrates with deep grooves on a GaAs substrate misoriented by 9°, every groove contains large regions of highly ordered and completely disordered material separated by a few micrometers. This allows a direct determination of the effect of ordering on the band gap of the material using cathodoluminescence spectroscopy, allowing the first direct demonstration that ordering reduces the energy band gap of a III/V alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109006
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...