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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first atomic images of the hydrogen terminated Si(111) surface have been acquired in aqueous sulfuric acid solutions. The observed interatomic distance with threefold symmetry is ∼3.8 A(ring), indicating that the ideal Si(111):H-1×1 surface can be prepared by chemical etching in NH4F solutions. It is demonstrated that in situ scanning tunneling microscopy is an extremely important method for revealing chemical processes with atomic resolution in the chemical etching of semiconductors in solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106904
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1347-1349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) has been made on an as-prepared Si(111) surface by the 1%-HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 A(ring). The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the σ (filled) states or the σ* (empty) states around the H atoms for the SiH3 radicals, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105304
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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