Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1105-1107
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the dynamics of photogenerated carriers in the semiconductor InP:Fe, using 2 ps time-resolved infrared (IR) reflection and transmission. We analyze the reflection data in a new way: the transient signal is related to the Fourier transform of the injected carrier depth profile. Because of this sensitivity to the depth profile, time-resolved IR reflection is a unique tool for studying carrier dynamics and is potentially better than visible reflection or Raman scattering. We use the sensitivity of the IR reflection here to test the validity of the standard one-dimensional ambipolar diffusion model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106458
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