Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1992-1994
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality Nb/Al, Alox/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345579
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