ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An exact two-dimensional molecular beam epitaxial growth of GaAs/AlGaAs layers has been achieved by using a flux-interruption-and-annealing method. This growth has been made possible by using phase-locked reflection high-energy electron diffraction oscillation during epitaxial growth. Quality of epitaxial layers grown by this method has been confirmed by photoluminescence and Fourier transform infrared spectroscopy measurements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351058
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