ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron traps in bulk n-type Hg0.7Cd0.3Te were investigated near the HgCdTe/SiO2 interface by use of deep level transient spectroscopy on metal-insulator-semiconductor structures [D. V. Lang, J. Appl. Phys. 45, 3022 (1974)]. Three electron traps are found with activation energies (relative to the conduction band edge) of 0.12, 0.172, and 0.079 eV, and corresponding capture cross sections of 3.5×10−18, 1.1×10−16, and 1.2×10−18 cm2. Depth profiles from the surface to ∼1.0 μm show the concentration of the 0.172-eV trap to be uniform while the 0.12-eV trap shows a strong depth dependence. It is undetectable at the surface, rising in concentration to twice its bulk value at ∼0.5 μm depth then falling to a value comparable with that of the 0.172-eV trap in the bulk (1 μm). Divalent trapping behavior has also been detected. In this case, the deeper state significantly depopulates, enabling a shallower state to then depopulate [J. S. Blakemore, Semiconductor Statistics (Pergamon, London, 1962), p. 156].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336304
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