ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
Guided ion-beam techniques are used to measure the cross sections for reaction of SiF4 with Ar+, Ne+, and He+ from thermal to 50 eV. Charge transfer followed by loss of F atoms are the sole processes observed. All SiF+x (x=0–4) products are observed, except for SiF+4 from reaction with Ne+ and He+, and Si+ from reaction with Ar+. At high energies, the dominant products are SiF+3 in the Ar system, and SiF+ in both the Ne and He systems. There is some evidence in the Ne system for an excited state of SiF+3 at 5.7 eV. In the Ar+ and Ne+ reactions, the observed energetics are consistent with literature thermochemistry, but with He+, reaction barriers are observed. A value of ΔH0f,298 (SiF+3)=−30.1±0.9 kcal/mol is derived, which is in agreement with previous values but is much more precise. The observed product distributions and energetics are explained by consideration of the potential energy surfaces and the difference in ionization potentials of the rare gases. Finally, the relationships of these reactions to plasma deposition and etching are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.456016
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