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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and biological activity of modified peptide inhibitors of angiotensin-converting enzyme (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 1291-1295 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00147a030
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancing Nursing Productivity: A Social Psychologic Perspective (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Public health nursing 5 (1988), S. 0 
    Details
    ISSN: 1525-1446
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A major determinant of organizational productivity is the design of structures and processes within a functioning organization. Research has focused on structures that contribute to productivity, but has given much less attention to the processes that occur particularly in health service organizations. We examined the relationships of organizational process and productivity in 20 nursing work groups in a sample of local health departments in North Carolina. Analysis focused on level of organizational climate (communication flow, decision-making practices, motivational conditions, concern for human resources), leadership behaviors, and quality of group interactions. The relationships of these processes to productivity (number of services produced per unit of staff time available) across a series of major departmental services were evaluated, together with implications of findings for strategies to improve the functioning of nursing work groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1525-1446.1988.tb00560.x
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  • 3
    Electronic Resource
    Electronic Resource
    Ballistic electron transport across collector barriers in AlGaAs/GaAs hot-electron transistors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1252-1254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo calculation has been performed to simulate the experiment of Heiblum and co-workers [Phys. Rev. Lett. 55, 2200 (1985)], regarding ballistic electron transport and the electron transit time across the AlGaAs collector barrier region in AlGaAs/GaAs tunneling hot-electron transfer amplifier devices. Ballistic transport is proven to be highly probable across a 1000-A(ring)-thick collector barrier under retarding field and hot-electron injection conditions at 4.2 K. Applying accelerating fields in the barrier results in almost negligible ballistic fraction of the transmitted hot electrons because of electron scattering into the satellite valleys. This result seems paradoxical at first sight. However, it is typical for electronic transport in heterolayers and fully consistent with the interpretation of the experiments by Heiblum and co-workers. There exists a negative collector-base bias range which minimizes the collector barrier transit time, corresponding to the condition of large ballistic probability and simultaneously relatively little deceleration of the electrons by the applied retarding field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99172
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  • 4
    Electronic Resource
    Electronic Resource
    Electron transport in heterostructure hot-electron diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 373-375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical electron transport in GaAs/AlxGa1−xAs heterostructures is investigated through Monte Carlo simulations of the heterostructure hot-electron diode (HHED). A fully self-consistent ensemble Monte Carlo algorithm with a realistic numerical band structure is employed. Results show that transport in the HHED is dominated by the influence of the heterointerface closest to the emitting contact. Two distinct modes of conduction are observed. One is a low-conductivity regime where transport is predominantly by gamma valley tunneling. The other is a high-conductivity regime where transport is mainly due to thermionic emission of electrons from the GaAs to the AlxGa1−xAs. In the latter most of the electrons are in the L and X valleys when they transfer to the wide-gap material. In these valleys the propagation from GaAs to AlxGa1−xAs is virtually unimpeded as the band-edge discontinuities are small in contrast to the situation for gamma electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99898
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Barrier height fluctuations in very small devices due to the discreteness of the dopants'' [J. Appl. Phys. 61, 5178 (1987)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3491-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339866
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of field fluctuation on impact ionization rates in semiconductor devices due to the discreteness and distribution of dopants (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1456-1459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field fluctuations due to dopants in a p+−n junction have been calculated and used to study the effects on the impact ionization rate with a Monte Carlo simulation. Results are plotted along the direction normal to the interface. We report that the field fluctuations have no effect on the ionization rate in the dead space and a small and spatially delayed effect in the region after the dead space even though the field shows large and rapid fluctuations. A similar "averaged-out'' effect is also shown for the average electron energy. The enhancement in the ionization rate due to the field fluctuations which Shockley expected in his pioneering research is shown to be negligibly small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338076
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  • 7
    Electronic Resource
    Electronic Resource
    Barrier height fluctuations in very small devices due to the discreteness of the dopants (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5178-5180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial fluctuation in barrier heights of a planar-doped barrier due to the discreteness of the acceptors and their statistical distribution has been calculated by solving Poisson's equation in three dimensions. Our model assumes a random distribution of spherical acceptor charges. Nonlinear Thomas–Fermi screening has been used to include the effect of free carriers and to determine their position-dependent concentration. At 4.2 K we find a range in barrier heights of 30 meV for a barrier with an average value of 0.206 eV. The method by which potential fluctuations broaden the energy distribution of ballistic electrons is illustrated by an example.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338293
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuity (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2880-2885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements were made on n+GaAs-(Al,Ga)As-n−GaAs and p+GaAs-(Al,Ga)As-p−GaAs capacitors. Current conduction is due to thermionic emission at low bias voltages and high temperatures. At low temperatures and high fields Fowler-Nordheim tunneling contributes to the conduction process. An inverted n-type capacitor analogous to an inverted modulation doped structure shows electrical characteristics comparable to the "normal'' structure grown under optimized conditions. Conduction- and valence-band discontinuities were calculated from measurements of thermionic emission barrier heights as a function of Al mole fraction in the (Al,Ga)As. A conduction-band discontinuity of 65% of the total band-gap discontinuity between GaAs and (Al,Ga)As, independent of Al mole fraction, was deduced. A classical theory for the capacitance voltage characteristics of p+GaAs-(Al,Ga)As-p−GaAs structures is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335224
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamics of heterostructure hot-electron diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1423-1427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of heterostructure hot-electron diodes are examined by Monte Carlo simulations. The transient analysis indicates that the limiting time constant for electronic switching from low to high conduction is of the order of the device transit time provided that tunneling- and thermionic-emission time constants associated with the formation of accumulation layers are of shorter duration; since the average electron velocities are of the order of 3×107 cm/s for typical device dimensions of 1000 A(ring), it follows that picosecond switching times should be possible for such device feature sizes. The effects of electron-electron interactions have also been considered; their influence on diode switching and on the switching of heterolayer devices in general are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344446
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  • 10
    Electronic Resource
    Electronic Resource
    This Polemis Business (1931)
    Cambridge : Cambridge University Press
    The @Cambridge law journal 4 (1931), S. 125-126 
    Details
    ISSN: 0008-1973
    Source: Cambridge Journals Digital Archives
    Topics: Law
    Notes: Year by year in lecturing on the law of contracts I am asked by successive generations of students whether the Polemis decision applies to the measure of damages for breach of contract. This decision is one which gives no practitioner sleepless nights, but troubles the teacher and the student a good deal. It seems therefore worth while to preserve from destruction such documentary information as may throw any light upon the case beyond what is afforded by the reports of the judgments of Sankey J. (as he then was) and of the Court of Appeal. Accordingly, by the courtesy of Messrs. Holman, Fenwick and Willan, the solicitors for the owners of the Thrasyvoulos, I am able to print the following documents:—1. Points of Claim.2. Letters of April 26, 1920, from charterers' solicitors demanding particulars and of April 28, 1920, from owners' solicitors in reply.3. Points of Defence.4. Respondents' (charterers') Contentions.5. Claimants' (owners') Contentions.6. Award and Special Case dated December 20, 1920.7. Further Finding by the Arbitrators dated February 11, 1921.8. Judgment of Sankey J. dated May 5, 1921, which, though reported in 26 Commercial Cases and 37 Times Law Reports, is reprinted here from the transcript for the benefit of readers to whom these reports may not be available.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1017/S0008197300132787
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