ISSN:
1432-0630
Keywords:
73.30.+y
;
73.40.Ns
;
73.20.−r
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract This paper describes the principle of the determination of interface-state parameters by deep level transient spectroscopy (DLTS) and presents a new, simple and exact method to discriminate the DLTS signal due to the emission from interface states from that from bulk traps. The n-type Au-GaAs and Cr-GaAs interfaces have been investigated by the technique. The results obtained in the investigation have revealed the dependences of the energy position, density and capture cross section for the interface states on the metal deposited onto the semiconductor surface, which is consistent with the theoretical prediction by Yndurain and the experimental results obtained by other authors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616702
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