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  • 1985-1989  (6)
  • Polymer and Materials Science  (5)
  • 61.50 Jr  (1)
  • 34
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Sputtering induced topography development on f.c.c. metals (1985)
    Springer
    Applied physics 38 (1985), S. 77-95 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 Mb ; 61.50 Jr ; 61.80 ki
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The generation and development of surface features by ion bombardment induced sputtering erosion of f.c.c. metals is reviewed. Studies with polycrystalline substrates reveal the plethora of individual features, both etch pits and cones and the repetitive features, such as ripple trains, which form differently on different crystallite surfaces. Studies with well defined single crystals clarify the origins of such features and the relative independence of their habit on ion species and substrate material.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620458
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  • 2
    Digitale Medien
    Digitale Medien
    Facet development and its influence on depth resolution during sputtering of Si (1985)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 7 (1985), S. 41-48 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: A model is developed, assuming mutation of facet lengths to larger values, to explain the experimental observations of the change in the population distribution of the lengths of facets developed during ion bombardment sputtering erosion of Si. The ensuing Gaussian facet length distribution, with mean length increasing linearly with ion fluence, is then used to show that the depth resolution δz/z0 of interface broadening first increases as z-10 and then tends towards a constant value with increasing z0.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740070109
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  • 3
    Digitale Medien
    Digitale Medien
    An altered layer model for sputter-profiling (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 194-208 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: An altered layer model is developed, consisting of an outer surface or sputtering layer from which atoms are ejected by ion bombardment and an adjacent deeper layer in which atomic constituents are spatially homogenised by bombardment-induced mixing processes and between which layers atomic constituents are again intermixed. The model is applied to the case of sputtering erosion through an interface, and broadening effects are examined. It is shown that the model relaxes, on the one hand, to earlier treatments of non-distinguishable sputtering and altered layers and, on the other hand, by assuming multiple altered layers, to earlier continuum (non-discretized layer) models. Suggestions for controlled experimental studies for model verification are made.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740140406
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  • 4
    Digitale Medien
    Digitale Medien
    The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 511-523 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The quasi-linear partial differential continuity equations that describe the evolution of the depth profiles and surface concentrations of marker atoms in kinematically equivalent systems undergoing sputtering, ion collection and atomic mixing are solved using the method of characteristics. It is shown how atomic mixing probabilities can be deduced from measurements of ion collection depth profiles with increasing ion fluence, and how this information can be used to predict surface concentration evolution. Even with this information, however, it is shown that it is not possible to deconvolute directly the surface concentration measurements to provide initial depth profiles, except when only ion collection and sputtering from the surface layer alone occur. It is demonstrated further that optimal recovery of initial concentration depth profiles could be ensured if the concentration-measuring analytical probe preferentially sampled depths near and at the maximum depth of bombardment-induced perturbations.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740140905
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  • 5
    Digitale Medien
    Digitale Medien
    The precise determination of concentration distributions using depth-sectioning methods (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 572-574 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Consideration of the continuity equation relating atomic fluxes entering and leaving a layer from the instantaneous surface to a fixed depth beyond the extent of any atomic relocation shows that measurements of total atomic exit flux, of a given species, the rate of change with time of the species concentration over the fixed depth, and sputtering speed, can yield initial depth distributions of the atomic species.
    Zusätzliches Material: 1 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740140914
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  • 6
    Digitale Medien
    Digitale Medien
    The effect of surface topography evolution on sputter profiling depth resolution in Si (1985)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 7 (1985), S. 35-40 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Experimental studies of the development of surface topography on Si surfaces during Ar+ ion bombardment and sputter erosion indicates that the Si becomes continuously prismatically facetted and that facet dimensions increase linearly with mean eroded depth. These observations lead to an analytic model of the achievable depth resolution δz/z0 in sputter erosion which is independent, for deep profiles of z0.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740070108
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