ISSN:
1432-0630
Keywords:
78.55.Ds
;
71.55.Fr
;
71.70.Ej
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have measured systematically the Cr-related zero-phonon lines in the 0.839 eV region in a series of plastically-bent semi-insulating GaAs:Cr with compressive or tensile stress along various bending axes. As a result, it has been found that the residual stress in semi-insulating GaAs:Cr wafers can be sensitively characterized from a splitting and energy shift of the 0.839 eV Cr-related luminescence lines in the low-temperature photoluminescence spectra. Furthermore, we have applied this method to the characterization of the interface stress of OMVPE-grown ZnSe/GaAs:Cr heterostructure and found that anomalous stress exists at the ZnSe/GaAs interface, which is inconsistent with stress predicted by the lattice mismatch of the heterojunctions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00631118
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