ISSN:
1432-0630
Keywords:
68.55
;
73.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00624935
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