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  • 1
    Electronic Resource
    Electronic Resource
    228. Hat der histologische Typ nach Lauren für die Planung des operativen Vorgehens zur kurativen Behandlung eines Magencarcinoms eine Bedeutung? (1987)
    Springer
    Langenbeck's archives of surgery 372 (1987), S. 867-868 
    Details
    ISSN: 1435-2451
    Keywords: Stomach Cancer ; Lauren classification ; Prognosis ; Recurrence ; Magencarcinom ; Lauren-Klassifikation ; Prognose ; Rezidiv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Beim Intestinalzelltyp unterscheidet sich die Rezidivrate bei einem Sicherheitsabstand von unter 20 mm (20,5%) nicht von einer Distanz über 20 mm (13,0%). Beim diffusen Typ kann eine Vergrösserung des Abstandes auf über 40 mm, die Rate von 26,5 auf 15,8% senken (n = 700, 1969–1985/31.12.86, RO). Bei Beachtung der Abstände nach oral und aboral beträgt für beide Typen die Rate eines lokalen Rezidivs 10%, die Prognose ist identisch (5-Jahresüberlebensrate bei diffusem/Intestinalzelltyp, pathologisches Stadium I 84,7/69,2%, II 62,6/65,9%, III 36,2/34,7%). Die Sicherheitsabstände sind besonders wichtig im Bereich von Oesophagus und Duodenum.
    Notes: Summary For the intestinal cell type of stomach cancer according to Lauren's classification, the local recurrence rate does not vary with a safety margin above or below 20 mm. However, enlargement over 40 mm can reduce the rate of local recurrence from 26.5% to 15.8% for the diffuse type (n = 700). With respect to the safety margin in oral and aboral resection lines, the rate is the same for both types (10%) as is the prognosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01298012
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  • 2
    Electronic Resource
    Electronic Resource
    XPS investigation of oxide films on InP(100) (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 315-319 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The effect of chemical etching and the oxide growth on the etched surfaces on n- and p-InP(100) have been studied using X-ray photoelectron spectroscopy. The samples were etched in HCI (1 molar in methanol) and then annealed at 650 K in a vacuum for 1 hour. After this procedure both samples were oxidized in air at room temperature for a long time. The stoichiometry of the oxide layer was determined by angle-resolved analysis of core level spectra.The surface treatment leads to an indium-rich surface. After annealing the In/P atomic ratios amount to 2.0 and 1.5 for n-InP and p-InP, respectively. Most of the oxygen on the surface after etching and annealing is presented as In2O3 and In(OH)3.Within the oxide layers of the air-oxidized samples the In/P atomic ratios vary from 2.5 to 3.7 for both n- and p-InP showing a depletion of P during the oxidation. From angle-dependent measurements it is concluded that the oxide layers consist of InPO4 and In(OH)3 whereas the outer layer is InPO4-rich. The presence of In2O3 can be suggested in the oxide layer of n-InP only. The oxidized p-type sample contains more oxygen than the n-type one.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120508
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