Electronic Resource
Chichester [u.a.]
:
Wiley-Blackwell
Surface and Interface Analysis
12 (1988), S. 315-319
ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The effect of chemical etching and the oxide growth on the etched surfaces on n- and p-InP(100) have been studied using X-ray photoelectron spectroscopy. The samples were etched in HCI (1 molar in methanol) and then annealed at 650 K in a vacuum for 1 hour. After this procedure both samples were oxidized in air at room temperature for a long time. The stoichiometry of the oxide layer was determined by angle-resolved analysis of core level spectra.The surface treatment leads to an indium-rich surface. After annealing the In/P atomic ratios amount to 2.0 and 1.5 for n-InP and p-InP, respectively. Most of the oxygen on the surface after etching and annealing is presented as In2O3 and In(OH)3.Within the oxide layers of the air-oxidized samples the In/P atomic ratios vary from 2.5 to 3.7 for both n- and p-InP showing a depletion of P during the oxidation. From angle-dependent measurements it is concluded that the oxide layers consist of InPO4 and In(OH)3 whereas the outer layer is InPO4-rich. The presence of In2O3 can be suggested in the oxide layer of n-InP only. The oxidized p-type sample contains more oxygen than the n-type one.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740120508
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