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The epitaxial growth of gallium arsenide using triethylarsine (1989)

Maeda, T ; Hata, M ; Zempo, Y ; [weitere]

New York, NY [u.a.] : Wiley-Blackwell

Applied Organometallic Chemistry 3 (1989), S. 151-156

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Details

ISSN: 0268-2605

Schlagwort(e): Epitaxial ; gallium arsenide ; decomposition ; triethylarsine ; semiconductor ; Chemistry ; Organic Chemistry

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Chemie und Pharmazie

Notizen: The thermal decomposition of triethylarsine (TEAs) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH3 or with 20% ammonia (NH3) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.

Zusätzliches Material: 6 Ill.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1002/aoc.590030206

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