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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 4569-4574 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 313-315 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 552-557 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1258-1265 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: By time-of-flight photocurrent techniques, hole transport has been investigated in vapor deposited films of the title compound. The measurements were made over a wide range of fields and temperatures which encompassed the glass transition temperature. The results are described within the framework of the disorder formalism due to Bässler and co-workers. The formalism is based on the assumption that transport occurs by hopping in a manifold of states subject to both energetic (diagonal) and positional (off-diagonal) disorder. In this paper, we describe (1) the field and temperature dependencies of the photocurrent transients, (2) the role of polymer dynamics on charge transport at temperatures above the glass transition temperature, and (3) the spectroscopy of interfacial hole states derived from an analysis of photocurrent transients in terms of computer simulations conducted under the premise of energy selective carrier injection into a Gaussian distribution of states.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6515-6519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been reported that in bilayer light emitting diodes in which large internal energy barriers for holes and electrons exist, electroluminescence features a step function-like onset upon applying the voltage. A theory is advanced to explain that effect. It is based upon time-dependent accumulation of interfacial charge followed by tunneling across the interface. Good agreement between theory and experiment is obtained. The effect may be exploited for signal addressing in flat panel displays. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 5327-5331 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The field and temperature dependencies of the hole mobility of 1,1-bis(di-4-tolylaminophenyl)cyclohexane (TAPC) doped polystyrene have been measured and compared to results obtained for the TAPC doped polycarbonate and pure TAPC. The results are described by the disorder formalism, due to Bässler and co-workers. The mobility of TAPC doped polystyrene is approximately 100-fold greater than that observed for TAPC doped polycarbonate. This effect is interpreted in terms of (1) the elimination of random dipolar fields due to static dipole moments of the polycarbonate that affect the energetic disorder, and (2) improved electronic intermolecular coupling with a concomitant reduction of positional disorder.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5447-5454 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hole mobilities have been measured in vapor deposited films of 1,1-bis(di-4-tolylaminophenyl)cyclohexane (TAPC) and TAPC-doped bisphenol-A-polycarbonate (BPPC). Over an extended range of temperatures, the mobilities decrease with increasing field at low fields. At high fields, a log μ∝E1/2 relationship is observed with a slope that approaches zero at high temperatures. The results are described within the framework of the disorder transport formalism. By comparison of the experimental results with Monte Carlo simulations, we show that the observed behavior is a signature of the simultaneous presence of diagonal and off-diagonal disorder. Agreement between simulation results and experiment is excellent. Generalizing these results provides a framework for determining the magnitude of the relevant diagonal and off-diagonal disorder parameters from an analysis of mobility measurements.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 8276-8281 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hole mobilities have been measured in vapor deposited films of 1,1-bis(di-4-tolylaminophenyl)cyclohexane over an extended range of fields and temperatures. At 295 K, the mobility is approximately 10−2 cm2/V s, the highest value for a disordered molecular solid reported thus far. Monte Carlo simulations of random walk in a geometrically and energetically disordered medium demonstrate that the time dependence of the photocurrent and the field and temperature dependencies of the mobility can be described quantitatively in terms of the inherent disorder and its effect on charge transport. No polaronic or trapping phenomena need to be invoked to reproduce even subtle features of the experimental results.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8136-8141 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of permanent dipoles on the density-of-states (DOS) function of an array of hopping sites is examined by summing the contributions of individual dipoles to the total potential at a given site. For relative dipolar site concentrations (approximately-greater-than)0.1, the DOS function is of Gaussian shape. At lower concentrations, it approaches a Lorentzian. Good agreement with literature data on the dipolar contribution to the DOS function for hole transport in molecularly doped polymers and molecular glasses differing with regard to dipole moment and concentration of dipolar moieties is found.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5554-5560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transient electroluminescence (EL) from organic light-emitting diodes based on tristilbeneamine dispersed in polysulfone. An EL overshoot is observed a few microsecond after reversing the driving voltage. The amplitude of the EL spike can considerably exceed the previous EL level. The maximal EL intensity is strongly influenced by temperature, time duration of voltage pulse, and magnitude of reverse voltage. The time integrated overshoot intensity of EL scales as a power law with the pulse length. We attribute the overshoot effect to (i) the accumulation of holes on the interface formed by a polymer and a thin insulating layer of aluminum oxide next to the aluminum cathode under application of positive bias and (ii) the drift of holes back to the anode when the external field is being reversed and recombination with electrons in the bulk of the material. It turns out that the surface roughness of the Al2O3 layer is important for the recombination kinetics under reverse bias. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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