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  • 1
    Electronic Resource
    Electronic Resource
    Nitridation process of sapphire substrate surface and its effect on the growth of GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3487-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridated layer formed on a (0001) sapphire (α-Al2O3) substrate surface by heating at 1050 °C in ammonia (NH3) gas was analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscope (TEM) and energy dispersive x-ray spectrometry (EDX). Their influence on the growth of GaN in the combined usage of initial nitridation and successive deposition of a buffer layer was examined by AFM observations. The intensity of the N1s nitrogen peak in the XPS rapidly increased with nitridation time, reaching saturation in a few minutes, and then continued to increase gradually. This change was found to correspond to morphological change revealed by AFM observations, that is, from a flat nitridated layer to high-density (109–1010 cm−2) nitridated protrusions. TEM observations and EDX measurements showed that the nitridation forms an amorphous layer consisting of AlNxO1−x. The flat nitridated layer, when combined with a buffer layer, favors two-dimensional growth of a thick GaN layer on it, while the layer with protrusions results in three-dimensional growth. Thus, thick GaN layers with smooth surfaces can be grown by controlling the surface of the nitridated layer, where a crystal-amorphous-crystal growth mechanism is successfully operating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361398
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Nitridation process of sapphirre substrate surface and its effect on the growth of GaN'' [J. Appl. Phys. 79, 3487 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1942-1943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363832
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  • 3
    Electronic Resource
    Electronic Resource
    The energy band alignment of Xc, Γc, and Γv points in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1763-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Better carrier confinement in 0.6-μm-band laser diodes can be achieved by incorporating an AlInP layer into the (Al0.7Ga0.3)0.5In0.5P cladding layers. The effectiveness of this heterostructure, though, cannot be analyzed without detailed knowledge of the energy band alignment at the Xc, Γc, and Γv band extrema. We conducted photoluminescence and photoreflectance measurements at 12–100 K on (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (x=0.47–0.61) free from long-range ordering, and analyzed the results to obtain basic data on the alignment scheme. In these measurements we observed the Γc to Γv and the Xc to Γv transitions in bulk Al0.53In0.47P and (Al0.7Ga0.3)0.5In0.5P alloys, the AlxIn1−xP Xc to (Al0.7Ga0.3)0.5In0.5P Γv transition in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP superlattices, and the Xc to Γv and to the Γc to Γv transitions in 20-nm-wide AlxIn1−xP layers in (AlyGa1−y)0.5In0.5P/AlxIn1−xP/(AlyGa1−y)0.5In0.5P double heterostructures (x=0.33–0.39, y=0.7–1.0). We found that the energy level of Xc in AlxIn1−xP decreased by 0.09 eV as x increased from 0.47 to 0.61, the Xc of AlxIn1−xP crossed the Γc at 0.340 (±0.008), and the Γv of AlxIn1−xP crossed the Γv of (Al0.7Ga0.3)0.5In0.5P at x=0.47(±0.01). The share of the band offset at Γc for x=0.53 was 75(±3)%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364064
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  • 4
    Electronic Resource
    Electronic Resource
    Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 583-585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the electroreflectance spectra of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. As a result, it has been found that there exist anomalous structures in the region of the E0 and E1 band edges of this material. These anomalous structures are closely related to the recently reported ordered phase in this alloy, since these structures have never been observed with disordered Ga0.5In0.5P alloys such as bulk crystals and epitaxial layers grown by liquid phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99864
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  • 5
    Electronic Resource
    Electronic Resource
    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the thickness control of the cladding layer adjacent to light absorbing layers is significantly improved. Results show that the GaAs layer is effective as an etch-stop layer even if the thickness is only 1–2 nm. The total internal loss of the lasers is estimated to be about 20 cm−1 and loss due to the insertion of the GaAs layer is almost negligible. A threshold current of about 50 mA and a stable fundamental transverse mode up to an output power of about 10 mW is attained at room temperature under cw operation. Similar results were obtained when an AlGaAs layer was used instead of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100676
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  • 6
    Electronic Resource
    Electronic Resource
    Propagation loss of surface acoustic waves on a monolithic metal-insulator-semiconductor structure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 651-661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory for the propagation loss of surface acoustic waves on a monolithic metal-insulator-semiconductor structure is developed. We derive the theory for the case where an epitaxial layer of semiconductor on a heavily doped substrate is used. The experimental results obtained by using Sezawa waves on a monolithic ZnO/SiO2/Si structure are compared with the theoretical predictions. The theoretical values are in good agreement with the experimental values in regard to the bias-voltage characteristics, the temperature characteristics, and the effects of the impurity concentration and the thickness of the epitaxial layer. It is shown that the surface-acoustic-wave propagation loss is considerably sensitive not only to the impurity concentration but also to the thickness of the epitaxial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343099
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  • 7
    Electronic Resource
    Electronic Resource
    Uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1943-1945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity doping into a GaInP/AlGaInP multiquantum well (MQW) active layer is applied to suppress the occurrence of the ordered structure of column III elements. Calculation of the quantized energy level in an ordered and disordered GaInP quantum well (QW) shows that uniform p-type impurity doping into a MQW structure is more effective than modulation doping for shortening the lasing wavelength. The lasing wavelength of p-doped MQW lasers with a 3-nm-thick GaInP QW can be shortened to 633.2 nm at an output power of 2 mW at 20 °C. A maximum lasing temperature of 46 °C for a 630 nm band AlGaInP MQW laser with a cavity length of 450 μm is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106143
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  • 8
    Electronic Resource
    Electronic Resource
    Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double-heterostructure laser diodes on GaAsP substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-wavelength stimulated emission from a GaInP/AlGaInP double-heterostructure (DH) grown on GaAs0.6P0.4 substrates, where lattice-matched Ga0.7In0.3P is the active layer with Γ band-gap energy beyond 2.1 eV is investigated. Laser oscillation is attained at a wavelength below 590 nm. This shows that the DH attains sufficient carrier confinement for lasing even though the minimum Γ band-gap energy is close to that in the X band. By applying high-reflectivity coating on both facets of the cavity to decrease the optical mirror loss, we achieve lasing operation by the DH devices under pulsed current injection up to 200 K. The device exhibits threshold currents of 115 mA at 77 K and 380 mA at 200 K, and an output power level up to 0.3 mW. The oscillation wavelength is 577 nm at 77 K and 588 nm at 200 K when the current is injected at 1.2 times the threshold. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114187
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  • 9
    Electronic Resource
    Electronic Resource
    Summative Action of Acetylcholine with Physiological Stimulus on the Generator Potential in the Lateral Eye of the Horseshoe Crab (1960)
    [s.l.] : Nature Publishing Group
    Nature 187 (1960), S. 1118-1119 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Having obtained the responses by illumination of" a given intensity, duration and interval as controls (a in Fig. 1), the solution made by dissolving acetylcholine chloride in physiological saline solution was added by a micropipette to the external solution of a known volume. Then the responses by ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1871118b0
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of Temperature on the Retinal Slow Potential of the Horseshoe Crab (1961)
    [s.l.] : Nature Publishing Group
    Nature 190 (1961), S. 1011-1012 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The retinal slow potentials were recorded intra-cellularly from single ommatidia of the horseshoe crab by the same procedure as that described by another author4. The temperature of the bathing solution could be varied between 6 C. and 23 C. by controlling the inflow of the cold or warm ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1901011a0
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