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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Non-ohmic conduction in doped polyacetylene at low temperatures (1986)
    Springer
    The European physical journal 64 (1986), S. 19-23 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electrical conductivity of a iodine-doped polyacetylene is measured as a function of the electric field ℰ at temperatures between 4K and 0.3K. We find that after an initial non-linear behavior σ increases linearly with ℰ in agreement with a theoretical description based on variable-range hopping conduction. The non-linear rise at low fields depends on the iodine concentration. In heavily doped samples the increase is small and varies as ℰ2, whereas in less conductive samples a large change is observed at 0.3K which varies approximately as log ℰ for fields from 1 V/m to 150 V/m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01313684
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields (1988)
    Springer
    The European physical journal 71 (1988), S. 455-463 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The conductivity of doped Ge below the metal-insulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges asT −1/2. In weak fields the magnetoresistance increases asB 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of variable-range hopping between localized states having a Coulomb gap in the density of states at the Fermi level. The magnetoresistance is calculated for arbitrary fields by means of a quasi-classical method. A fit to the data gives the radius of the localized states and the density of states. The sample is found to be very close to the metal-insulator transition. A small increase of the binding energy is observed in strong fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01313932
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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