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  • 1985-1989  (20)
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Materialart
Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    Optically induced regeneration of the stable configuration of the EL2 defect in GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1451-1453 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron paramagnetic resonance measurements on the EL2 defect in semi-insulating GaAs show that after optically induced quenching into the metastable configuration the original stable configuration can be optically regenerated at temperatures below 140 K. We determined the spectral dependence of this regeneration in the 70–140 K temperature range. It is characterized at 90 K by an absorption band centered at (0.8±0.1) eV. However, the spectral dependence is temperature dependent and the thermal activation energy varies with the photon energy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98654
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  • 2
    Digitale Medien
    Digitale Medien
    Luminescence of the DX center in AlGaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature photoluminescence of the DX center in the near band edge and in the near-infrared region is interpreted within the small lattice relaxation model. The 1.5 μm luminescence band is attributed to an internal transition between the excited DX state and its ground-state level.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101608
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  • 3
    Digitale Medien
    Digitale Medien
    Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present experimental evidence for the presence in semi-insulating undoped GaAs of the double-acceptor defect with ionization energies of 78 and 203 meV, which is currently attributed to the GaAs antisite in concentrations of at least 2×1015 cm−3. We then discuss the implications of this result for the compensation mechanism in these materials.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100030
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  • 4
    Digitale Medien
    Digitale Medien
    Response to "Comment on ‘Physical meaning of electron capture kinetics on DX centers' '' [Appl. Phys. Lett. 55, 804 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 805-806 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101766
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  • 5
    Digitale Medien
    Digitale Medien
    Physical origin of the DX center (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 749-751 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: When intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in GaAlAs alloys, whereas the donor states associated to the Γ and X valleys remain shallow. This result accounts for the behavior of the so-called DX center.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99821
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  • 6
    Digitale Medien
    Digitale Medien
    Physical meaning of electron capture kinetics on DX centers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1841-1843 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The capture kinetics of electrons on DX centers are interpreted in terms of a simple model taking only into account the fact that the concentrations of the DX centers and of the doping impurities are equal. It is shown that there is no need to introduce an alloying effect in order to explain the capture as well as the emission kinetics, in agreement with the nonobservation of this effect in optical transitions. This is understood if the DX center is itself the donor impurity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100371
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  • 7
    Digitale Medien
    Digitale Medien
    Capture cross section of Si-SiO2 interface states generated during electron injection (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 153-155 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The evolution of the capture cross section of the Si-SiO2 interface states is analyzed when metal-oxide-semiconductor capacitors are stressed by Fowler–Nordheim injection of electrons from the n-type substrate. The capture cross sections of the energy distribution of the states are measured by a trap filling method using deep level transient spectroscopy. We found that the capture cross sections of near-midgap states increase by a factor 10, while they remain unchanged for the states localized near the conduction-band edge. The capture cross sections are temperature dependent and their associated activation energies increase with the stress from 30 to 100 meV. The exponential prefactor in the temperature-dependence law of the capture cross section is increased from 10−16 to 10−14 cm2 , and we suggest that the Fowler–Nordheim degradation induces new interface states of donor type in the upper part of the silicon band gap.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102397
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  • 8
    Digitale Medien
    Digitale Medien
    Defects in molecular beam epitaxy grown GaAlAs layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 68-69 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using deep level transient spectroscopy we characterized the shallow native traps in n-type doped Ga1−xAlxAs layers (with x=0.30 and 0.36) grown by molecular beam epitaxy. A trap lying at 0.18 eV below the conduction band is detected which exists in large concentration within 0.2 μm from the surface and is responsible for the freeze out of free carriers at low temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101756
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  • 9
    Digitale Medien
    Digitale Medien
    Electric field induced localization in GaAlAs-GaAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 532-533 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using deep level transient spectroscopy we have observed electron emission in a 50–50 A(ring) uniformly n-type doped GaAs-GaAlAs superlattice placed in the space-charge region of a Schottky barrier. This emission arises from carriers localized in the wells by the electric field above the barriers. This observation demonstrates that electric field induced localization in superlattices can be monitored using capacitance techniques.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100921
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  • 10
    Digitale Medien
    Digitale Medien
    Suppression of DX centers in GaAlAs-GaAs heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1115-1117 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using deep level transient spectroscopy we have studied the DX center in a series of periodic GaAs/GaAlAs uniformly Si doped structures. The presence of the DX center is only detected when the structures do not exhibit superlattice behavior. This is understood by the fact that either the DX associated level is resonant in the first conduction miniband (or above it) or that it does not exist because the original band structure of GaAlAs is destroyed by electron delocalization. Examination of the variation of the concentration of DX centers in periodic planar doped GaAlAs structures shows that this disappearance is due to a band structure effect, thus demonstrating that the DX center originates from a shallow-deep instability of the L-band effective mass state of the Si impurity due to intervalley mixing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100774
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