ISSN:
0001-1541
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Process Engineering, Biotechnology, Nutrition Technology
Notes:
A model including the effects of diffusion and convection can be used to predict the etch rate of crystalline silicon in a plasma discharge of nitrogen trifluoride. The case of a radial flow reactor with crystalline silicon wafers located at discrete positions can be solved using a finite-element solution to a boundary value problem. Such a model is useful to predict the effects of pressure, flow rate of etchant gas, percent silicon exposed, and wafer position on both inter-and intrawafer etch rates. It was found from modeling that greater uniformity in etch rate is achieved by lowering the pressure and percent exposure of silicon, and to a lesser degree the volumetric flow rate.
Additional Material:
16 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/aic.690330713
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