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  • 1985-1989  (5)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 643-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd2Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 °C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334757
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and characterization of InSb on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1016-1018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and 2.7×1016 cm−3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×1016 cm−3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100784
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Phase formation and identification of an epitaxial Fe-Ni alloy silicide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 154-157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial iron-nickel alloy silicide has been successfully grown on (111) Si for the first time using a new method of chemically electroless plating of Fe-Ni thin films on Si with subsequent annealing schemes. The deposited film was found to be amorphous by analytical scanning transmission electron microscopy. The alloy silicide phase formed during two-step vacuum annealing and was found to have an epitaxial relationship with the substrate Si. The composition of the eptaxial alloy silicide was identified by an energy dispersive analysis for x rays in the electron microscope. A small amount of nickel was found in the alloy silicide. The crystal structure of the silicide phase was analyzed to be that of an orthorhombic phase of FeSi2. The orientation relationships of the silicide phase with respect to the substrate were identified to be (033¯) (Fe,Ni)Si2(parallel)(022¯) Si, (055) (Fe,Ni)Si2(parallel)(4¯22) Si, and [100] (Fe,Ni)Si2(parallel)[111] Si. Typical arrays of regular interfacial dislocations of edge type, 1000 A(ring) in spacing, were found throughout the epitaxial regions. The formation and some potential applications of the epitaxial Fe-Ni alloy silicide are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342561
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction measurement of Pd2Si transformation kinetics using a linear position-sensitive detector (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1182-1190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique described previously for measurement of growth kinetics of Pd2Si layers from their solid state reaction couples has been extended by the use of a one-dimensional position-sensitive detector (PSD). Additionally, the method has been extended to include measurement of the Pd layer. A detailed description of the experimental arrangement and analytical procedures is presented. The kinetics of epitaxial Pd2Si film growth were measured in situ over a range of 170–230 °C. The PSD results, using data obtained from both the Pd2Si and Pd layers, were able to confirm parabolic growth behavior for the Pd2Si film. The rate constants followed Arrhenius behavior and yielded an activation energy of E=1.32±0.07 eV with a prefactor k0=0.49 cm2/s for the Pd2Si layer analysis and E=1.34±0.17 eV with a prefactor of 0.72 cm2/s for the Pd layer analysis. The PSD technique significantly enhances data collection and provides extended analytical capabilities. The method has the potential for measuring rate kinetics of other solid state reactions/transformations such as surface oxidation and alloy decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339977
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3467-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd2Si layers. Epitaxial Pd2Si films were grown on Si(111) substrates over a temperature range of 160–222 °C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy Ea=1.06 eV and prefactor k0=7×10−4 cm2/s. The low value of Ea suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd2Si/Si interfaces. The annealing ambient was the major source of further contamination. Upon emergence of the growth interface through the sample surface (some Pd2Si on surface), impurity pickup was detected. Interfacial roughness was indicated by all the techniques to be on the order of 20 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336816
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    Paper (German National Licenses)
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