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  • 1985-1989  (7)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6943-6947 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron mobilities μ were measured in dense gaseous krypton as a function of density normalized electric field E/n at 3.8≤n/1026 molecule m−3≤40 and 152≤T/K≤250. At each density a constant value of the mobility μ0 is attained at low E/n. At fields higher than a threshold (E/n)th μ first increased, passed through a maximum, and then decreased. In the saturated vapor nμ0 decreased with increasing (n,T) while at constant n, nμ0 increased with T. The density dependence of nμ0 is compared to the dielectric screening model of Baird [Phys. Rev. A 32, 1235 (1985)].
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2438-2440 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O2 annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y2O3, BaF2, and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O2 at about 800 °C or above before the superconducting YBCO phase can be formed by annealing in dry O2. However, sputtering in an Ar-O2 ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O2 only. If the ambient contains about 20% O2, films with Tc (R=0)〉85 K can be prepared without wet-O2 annealing. The Ar-O2 process therefore has the potential for in situ preparation of superconducting YBCO films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 66-68 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for servolocking the beat frequency between two lasers is described in which the lasers in effect replace the voltage-controlled oscillator in an indirect frequency synthesizer. The system is simple, relatively free from systematic frequency errors, and has good stability as characterized by Allan variance measurements.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2457-2459 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A data taking scheme is described in which two photomultipliers record photons from a light source. It is shown that if the chain of recorded events is chosen to alternate between the two detectors, first-order effects of dead time and afterpulsing present in the two individual detectors are eliminated. This alternating scheme results in the detection efficiency being halved.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 111 (1989), S. 1123-1125 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 3396-3404 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In low density CO2 gas, the density normalized mobility of electrons is nμe =1.88×1024 molecule/m V s, independent of temperature. It is an order of magnitude lower than the value in ethene, a hydrocarbon of similar molecular size and anisotropic polarizability. Scattering of thermal electrons by carbon dioxide molecules might involve a transient anion state. At densities n〉5×1025 molecule/m3 along the vapor/liquid coexistence curve, electron attachment to molecular clusters occurs, e−+(CO2)q(arrow-right-and-left)(CO2)−q, where q≈6. At n〉14×1025 molecule/m3 in the coexistence vapor the negative and positive charges have the same mobility, so the electrons are permanently attached. Electron detachment can occur when the gas is heated at constant density; heating decreases the average cluster size and provides activation energy for detachment. At a constant density ≥30×1025 molecule/m3 the value of nμe can be changed 1000-fold by changing T. At n=31 and 56 (1025 molecule/m3) the values of nμe for quasifree (unattached) electrons are 1.65 and 1.50 (1024 molecule/m V s), respectively. The equilibrium between attachment and detachment has ΔH0a =−90 kJ/mol and ΔS0a =−270 J/mol K. The value of nμ+ of the cations in the coexistence vapor is larger at temperatures below the triple point than above it. Perhaps the clustered ions also undergo a structure transition near the triple point. Positron attachment to (CO2)q clusters occurs at similar temperatures and densities as electron attachment.
    Type of Medium: Electronic Resource
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