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  • 1985-1989  (4)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Temperature rise induced by a cw laser beam revisited (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5123-5126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of spatial distribution of the temperature rise due to a cw laser beam focused on the surface of an absorbing material is reexamined. The effect of temperature dependence of the absorption and reflection coefficients is incorporated in the calculations in a self-consistent way. A Green's function has been developed for the heat diffusion equation in the axially symmetric case and a general steady-state solution is obtained for an arbitrary source function. Compared with previous results, our calculations predict melting at lower laser power densities and changes in the spatial temperature distribution. In the limit of large absorption constants these differences are small. However, they become increasingly significant as the absorption constant is decreased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335245
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced thermal strains in isotropic media: Polycrystalline Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2615-2619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytic solutions for the spatial distribution of elastic deformations, strains, and stresses induced on the surface and interior of an isotropic semi-infinite material by an arbitrary temperature distribution are applied to an isotropic medium which is exposed to an intense cw laser beam. We demonstrate results of such calculations in the case of polycrystalline silicon. The method can be applied to any polycrystalline material, or even moderately anisotropic cubic crystals. The calculations show the presence of considerable amounts of thermal strains or stresses for laser power densities below melting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340999
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Polycrystalline Si under strain: Elastic and lattice-dynamical considerations (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3346-3352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expressions are derived for the effective phonon deformation potentials of polycrystalline materials, based on the properties of tensor invariants and the Voigt–Reuss–Hill averages [Proc. Phys. Soc. London Sect. A 65, 349 (1952)]. These results, and similar ones for the elastic constants, are used to determine the effect of strains on the long-wavelength optical phonons exhibited by such materials. Application to polycrystalline Si shows that under a uniaxial or biaxial stress, the triply degenerate phonons split into singlet and doublet components that shift at different rates and appear indistinguishably in the Raman spectrum. The implications of such effects on the Raman band shape are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339296
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Laser excited luminescence of rare earth impurities in natural and synthetic CaF2 (1988)
    Springer
    Physics and chemistry of minerals 15 (1988), S. 597-600 
    Details
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract This work explores the potential of laser excited luminescence for the study of type and concentration of rare-earth (RE) luminescence centres in CaF2. A comparison with X-ray excited luminescence is made. The luminescence spectra of several natural and synthetic samples are obtained at low and room temperatures using different Ar+ and Kr+ laser lines for excitation. Tentative assignment of the luminescent lines to different RE2+ and RE3+ ions is made. The excitation is shown to take place predominantly through the emission of one phonon. The possibilities for concentration measurements of luminescent centres are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00311031
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    Paper (German National Licenses)
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