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  • 1985-1989  (3)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Defect formation in SiO2/Si(100) by metal diffusion and reaction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 589-591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decomposition of SiO2 films on Si(100) during ultrahigh vacuum anneal is found to be strongly enhanced by monolayer amounts of impurities deposited on the SiO2 surface. s- and p-band elements initiate decomposition via formation of volatile suboxides by surface reaction, whereas most transition metals decompose the oxide via laterally inhomogeneous growth of voids in the oxide. Transition metals need to diffuse to the SiO2/Si interface to enhance oxide decomposition via formation of volatile SiO. It is inferred that transition metal particles should be efficient in creating electrical defects in gate oxide layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100630
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Stacking-fault-induced defect creation in SiO2 on Si(100) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99734
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Dopant redistribution at Si surfaces during vacuum anneal (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4619-4625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p-type dopants is found to occur. The p-type dopant is identified by SIMS and by its diffusion characteristics as being boron. The measured doping profiles can be interpreted as indicating that the chemically cleaned surface contains boron impurities in the 1012/cm2 range that become electrically activated and diffuse into the substrate during high-temperature anneals. It is concluded that the boron exists initially in an oxidized state at the surface. Borosilicate parts present in any standard ultrahigh vacuum system are identified as a source of the pollution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338372
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    Paper (German National Licenses)
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