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  • 1985-1989  (3)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Electron velocity overshoot and valley repopulation effects in diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1902-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ensemble Monte Carlo procedures, electron velocity overshoot and transient valley repopulation in diamond have been investigated as a function of field strength and orientation. It is found that the response of electrons to the sudden application of a 50 kV/cm electric field along 〈100〉 results in a velocity transient with a maximum of 1.9×107 cm/s after 200 fs and a steady state value of 1.30×107 cm/s. For a field along 〈110〉, the corresponding maximum and steady state values are 2.0×107 and 1.4×107 cm/s, respectively. The calculated temporal and spatial duration of velocity overshoot in diamond is longer than that of silicon but shorter than that of gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101236
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Monte Carlo investigation of minority-electron transport in In0.53Ga0.47As (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport of minority electrons in p-type In0.53Ga0.47As has been investigated for 1017 and 5×1017 cm−3 doping levels. Using Monte Carlo methods and including inelastic electron-hole (e-h) scattering, it is found that the mean electron velocity for fields below 4 kV/cm is smaller when e-h scattering is included than when it is absent. The mean velocities above 4 kV/cm are higher when e-h scattering is included and reach a peak at 5 kV/cm. The study reveals that the principal contribution of the e-h scattering is a more efficient channel of electron energy relaxation, with the consequence of a significantly reduced transfer of carriers to the upper valleys for fields below 6 kV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98531
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electron-hole interaction and high-field transport of photoexcited electrons in GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5330-5336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a theoretical ensemble Monte Carlo method to study the response of carriers photoexcited by a 1.55-eV laser pulse to applied electric fields (less than 5 kV/cm) for excited carrier densities between 1017 cm−3 and 1018 cm−3. It is found that the electron-hole interaction reduces the fraction of electrons that transfer to the upper valleys and reduces the velocity of the electrons. These effects are more significant at low electric fields and higher excitation levels. The energy of the holes rises initially due to the energy transfer from the hot electrons through the electron-hole interaction. This is also reflected in a higher velocity for the holes during the first picosecond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338269
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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