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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 206-208 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the results of the passivation of photochemically unpinned GaAs surfaces using Langmuir–Blodgett (LB) films. Metal-insulator-semiconductor structures are fabricated with LB films as the insulator. The high-frequency capacitance versus voltage measurements show an order of magnitude decrease in the interface trap density (1011 cm−2 eV−1) as compared to the GaAs/anodic oxide interface. The hysteresis in the capacitance versus voltage curves was reduced from a 3-V shift in the flatband voltage, to about a 1-V shift, a level which has been seen in Si/LB film metal-insulator-semiconductor structures. Passivation with LB films is of interest because of their interesting electrical, chemical, and optical properties that can be used in GaAs-based devices.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 436-438 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of the surface acoustic wave (SAW) with the GaAs/AlAs superlattice is investigated using a separate-medium convolver structure. The magnitude and polarity of the acoustoelectric voltages exhibit strong temperature and SAW frequency dependences, a phenomenon that is not observed in homogeneous semiconductors. Possible SAW-superlattice interaction models that tentatively explain the observed data are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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