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  • 1985-1989  (6)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1662-1664 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved by the measurement of the voltage-dependent capacitance between tip and sample due to the depletion of carriers in the semiconductor, as the tip is scanned laterally over the surface. Measurements of dopant density have been demonstrated over a dopant range of 1015–1020 cm−3. Capacitance-voltage measurements have been made on a submicrometer scale.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1446-1448 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data which show that the magnetic force microscope is capable of detecting the component of the magnetic field parallel to the surface of a sample under study. Images of bits in a Co-alloy thin-film disk and of laser-written bits in a TbFe film were taken with a magnetized tip tilted at 45° with respect to the surface normal. In both cases the asymmetric part of the image of a domain is interpreted in terms of gradients in the in-plane component of the magnetic field. The bits written in the Co-alloy disk were decorated with small magnetized particles, allowing identification of the domain boundaries and the asymmetric component of the force microscope image due to in-plane magnetization.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 203-205 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub-100-nm tip and surface with a sensitivity of 1×10−19 F in a 1 kHz bandwidth. Feedback control is used to scan the tip at constant gap across a sample, providing a means of noncontact surface profiling. Images of conducting and nonconducting structures are presented.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1503-1505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise stemming from mechanical vibration, electronic noise, or low frequency (1/f power spectrum) inherent in the tunneling process, often limits the resolution, speed, or range of application of scanning tunneling microscopy (STM). We demonstrate a technique for minimizing the effect of these noise sources on the STM image. In our method, the tunneling tip is vibrated parallel to the sample surface at a frequency f0, above that of the feedback response frequency. Two signals are obtained simultaneously: the conventional topography, and a differential image corresponding to the amplitude of current modulation at f0. The resultant ac signal can be simply related to the normal STM topographic image, with significant improvement in the signal-to-noise ratio.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4723-4729 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified version of the atomic force microscope is introduced that enables a precise measurement of the force between a tip and a sample over a tip-sample distance range of 30–150 A(ring). As an application, the force signal is used to maintain the tip-sample spacing constant, so that profiling can be achieved with a spatial resolution of 50 A(ring). A second scheme allows the simultaneous measurement of force and surface profile; this scheme has been used to obtain material-dependent information from surfaces of electronic materials.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1900-1903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new optical technique is described for measurement of absolute distance. The approach is based upon a wavelength multiplexed heterodyne interferometer with FM demodulation. By temporally multiplexing discrete wavelengths in a heterodyne interferometer, a complete elimination of interferometric range ambiguity can be achieved while maintaining the high range sensitivity and resolution of interferometry. The basic theory is presented and an algorithm is described for measurement of range over meter distances with submicrometer resolution. The experimental implementation of the wavelength multiplexed interferometer is described and ranging results with 2 μm resolution from 20 cm are presented. A scanned three-dimensional map of a surface contour with 3-mm topography is also presented.
    Type of Medium: Electronic Resource
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