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  • 1980-1984  (1)
  • 1970-1974  (1)
  • Chemistry  (2)
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  • 1980-1984  (1)
  • 1970-1974  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 14 (1974), S. 494-497 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Poly(methyl methacrylate) prepared under special circumstances exhibits a substantial increase in refractive index after irradiation with ultraviolet light. The essential step in the preparation is peroxidation of the monomer prior to polymerization. This increase in refractive index results from a photo-induced polymerization of unreacted monomer (1-2 percent) within the film which produces an increase in density (and hence refractive index) in the irradiated region. It is believed that peroxides, both polymeric and monomeric, act as photoinitiators. Sensitivity depends on the concentration of photoinitiator but the absolute value of Δn depends on the amount of unreacted monomer.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1025-1028 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Deep UV[200 to 300 nanometers (nm)] photolithography has received much recent attention because it promises higher resolution than conventional exposure technology. Except for the change in wavelength from the 400 nm region, the exposure technology would remain virtually unchanged. We will discuss resist materials and processes explored in the last few years for optimization of deep UV lithography. Particular emphasis is placed upon the chemistry of resist design, multilevel processing schemes, and new sources for deep UV exposure.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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